PZT194 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – Silicon Planar Medium Power Transistor

Elektronische Bauelemente
Description
The PZT194 is designed for medium
power amplifier applications.
PZT194
NPN Transistor
Silicon Planar Medium Power Transistor
RoHS Compliant Product
SOT-223
Features
* 1 Amps Continous Current
* 60 Volt VCEO
* Complementary To PZT195
194
MAXIMUM RATINGS* (T_amb =25^oC, unless otherwise specified)
Symbol
Parameter
V_CBO
Collector-Base Voltage
VCEO
VEBO
Collector-Emitter Voltage
Emitter-Base Voltage
IC
Collector Current (DC)
Collector Current (Pulse)
IB
Base Current
PD
Total Power Dissipation
TJ,Tstg
Junction and Storage Temperature
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0̓
10̓
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13̓TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Value
80
60
5
1
2
200
2
-55~+150
Units
V
V
V
A
mA
W
C^O
ELECTRICAL CHARACTERISTICS Tamb=25^oC
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector-Base Cutoff Current
Symbol
BVCBO
*BVCEO
BVEBO
ICBO
IEBO
ICES
Min
80
60
5
-
-
-
Collector Saturation Voltage
Base Saturation Voltage
Base-Emitter Voltage
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
*VCE(sat)1 -
*VCE(sat)2 -
*VBE(sat)
-
*VBE(on)
-
*hFE1
100
*hFE2
100
*hFE3
80
*hFE4
30
fT
150
Cob
-
unless otherwise specified
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
100
100
100
0.25
0.5
1.1
1.0
-
300
-
-
-
10
Unit
V
V
V
nA
nA
nA
V
V
V
MHz
pF
Test Conditions
IC= 100µA, IE=0
IC= 10mA, IB=0
IE= 100µA, IC=0
VCB= 60V, IE=0
VEB=4V,I C=0
VCES = 60V
IC=500mA,IB=50 mA
I C= 1A,IB=100mA
I C= 1A,IB=100mA
I C= 1A,VCE=5V
VCE= 5 V, IC=1mA
VCE= 5 V, IC=500mA
VCE= 5 V, IC=1A
VCE= 5 V, IC=2A
VCE= 10V, IC= 50 mA, f=100MHz
VCB= 10V, f=1MHz,IE=0
*Measured under pulse condition. Pulse width 300µs, Duty Cycle 2%
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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