PZT159_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – PNP Silicon Planar

Elektronische Bauelemente
PZT159
PNP Silicon Planar
High Current Transistor
RoHS Compliant Product
Features
* 5 Amps continuous current, up to 15 Amp peak current.
* Excellent gain characteristic specified up to 10Amps.
* Very low saturation voltage
SOT-223
f 
0.30±0.03
R0.15
R0.15
Mechanical Data
Case: SOT-223 Plastic Package
Weight: approx. 0.021g
Marking Code: 159
C
E
C
B
Maximum Ratings and Thermal Characteristics
(TA = 25^OC unless otherwise noted)
Parameter
Junction Temperature
Symbol _-
Tj
Storage Temperature
Tstg
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
V EBO
Collector Current (DC)
IC
Collector Current (Pulse)
IC
Total Power Dissipation
PD
Notes: Device on alumina substrate.


f 
123
1. BASE
2. COLLECTOR
3. EMITTER
Value
+150
-55 to +150
-100
-60
-6
-5
-15
3.0
0.25
12°±1°
6°±3°
12°±1°
Unit
O_C
O_C
V
V
V
A
A
W
Electrical Characteristic s (TJ = 25^OC unless otherwise noted)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
(w/ Real Device Limit)
Symbol
BVCBO
BVCER
Min
-100
-100
Typ.
-
-
Max
-
-
Collector-Emitter Breakdown Voltage *BVCEO
-60
Emitter-Base Breakdown Voltage
BVEBO
-6
Collector-Base Cutoff Current
ICBO
-
Collector-Base Cutoff Current
(w/ Real Device Limit)
ICER
-
-
-
-
-
-
-50
-
-50
Emitter-Base Cutoff Current
Collector Saturation Voltage 1
Collector Saturation Voltage 2
Collector Saturation Voltage 3
Collector Saturation Voltage 4
Base Saturation Voltage
Base-Emitter Voltage
DC Current Gain 1
DC Current Gain 2
DC Current Gain 3
DC Current Gain 4
Gain-Bandwidth Product
Output Capacitance
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
IEBO
-
-
-10
*VCE(sat)1 -
-20 -50
*VCE(sat)2 -
-85 -140
*VCE(sat)3 -
-155 -210
*VCE(sat)4 -
-370 -460
*VBE(sat)
-
-1.08 -1.24
*VBE(on)
- -0.935 -1.07
*hFE1
100 200
-
*hFE2
100 200 300
*hFE3
75
90
-
*hFE4
10
25
-
fT
-
120
-
Cob
-
74
-
Uni Test Conditions
V IC=-100µA, IE=0
V IC=-1µA, RB=1KΩ
V IC=-100mA, IB=0
V IE=-100µA, IC=0
nA VCB=-80V, IE=0
nA VCB=-80V, R=1KΩ
nA VEB=-6V, IC=0
mV IC=-100mA, IB=-10mA
mV IC=-1A, IB=-100mA
mV IC=-2A, IB=-200mA
mV IC=-5A, IB=-500mA
V IC=-5A, IB=-500mA
V VCE=-1V, IC=-5A
VCE=-1V, IC=-10mA
VCE=-1V, IC=-2A
VCE=-1V, IC=-5A
VCE=-1V, IC=-10A
MH VCE=-10V, IC=-100mA,
pF VCB=-10V, IE=0, f=1MHz
Any changing of specification will not be informed individual
Page 1 of 2