PZT158_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – NPN Transistor

Elektronische Bauelemente
Description
The PZT158 is designed for general
purpose switching and amplifier
applications.
PZT158
NPN Transistor
Silicon Planar High Current Transistor
RoHS Compliant Product
SOT-223
Features
* 6Amps Continous Current, Up To
20Amps Peak Current
* Excellent Gain Characteristic,
Specified Up To 10Amps
* Very Low Saturation Voltages
158
MAXIMUM RATINGS* (T_amb =25^oC, unless otherwise specified)
REF. _Min.
A 6.70
C 2.90
D 0.02
E
0̓
I 0.60
H 0.25
Max.
7.30
3.10
0.10
10̓
0.80
0.35
REF.
B
J
1
2
3
4
5
Min. Max.
13̓TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Symbol
Parameter
Value
Units
V_CBO
Collector-Base Voltage
150
V
VCEO
VEBO
Collector-Emitter Voltage
Emitter-Base Voltage
60
V
6
V
IC
Collector Current (DC)
Collector Current (Pulse)
6
A
20
PD
Total Power Dissipation
3
W
TJ,Tstg
Junction and Storage Temperature
-55~-150
C^O
*The power which can be dissipated assuming the device is mounted in a typical on a P.C.B. with copper equal to 4 square inch min..
ELECTRICAL CHARACTERISTICS Tamb=25^oC unless otherwise specified
Parameter
Symbol Min Typ. Max
Collector-Base Breakdown Voltage
BVCBO 150
-
-
Collector-Emitter Breakdown Voltage *BVCEO
60
-
-
Emitter-Base Breakdown Voltage
BVEBO
6
-
-
Collector-Base Cutoff Current
ICBO
-
-
50
Collector-Base Cutoff Current
ICES
-
-
50
Emitter-Base Cutoff Current
Collector Saturation Voltage
IEBO
-
*VCE(sat)1 -
*VCE(sat)2 -
*VCE(sat)3 -
*VCE(sat)4 -
-
10
-
50
-
100
-
170
-
375
Base Saturation Voltage
*VBE(sat)
-
-
1.2
Base-Emitter Voltage
*VBE(on)
-
-
*hFE1
100
-
1.15
-
DC Current Gain
*hFE2
*hFE3
100 200 300
75
-
-
*hFE4
25
-
-
Gain-Bandwidth Product
fT
-
130
-
Output Capacitance
Cob
-
45
-
On-Time
Ton
-
45
-
Off-Time
Toff
-
1100
-
*Measured under pulse condition. Pulse widthЉ300ȝs, Duty CycleЉ2%
Spice parameter data is available upon request for this device.
http://www.SeCoSGmbH.com
Uni
V
V
V
nA
nA
nA
mV
V
V
MHz
pF
Test Conditions
IC= 100µA, IE=0
IC= 10mA, IB=0
IE= 100µA, IC=0
VCB= 120V, IE=0
VCES=60V
VEB= 6V, IC=0
IC= 100mA, IB= 5mA
IC= 1A, IB= 50mA
IC= 2A, IB= 50mA
IC= 6A, IB= 300mA
IC= 6A, IB= 300mA
VCE= 1V, IC= 6A
VCE= 1V, IC= 10mA
VCE= 1V, IC= 2A
VCE= 1V, IC= 5A
VCE= 1V, IC= 10A
VCE= 10V, IC= 100mA, f=50MHz
VCB= 10V, IE=0, f=1MHz
nS _{VCC=10V,IC=1A,IB1=IB2=100mA}
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
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