PZT158 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – Silicon Planar High Current Transistor

Elektronische Bauelemente
Description
The PZT158 is designed for general
purpose switching and amplifier
applications.
PZT158
NPN Transistor
Silicon Planar High Current Transistor
RoHS Compliant Product
SOT-223
Features
* 6Amps Continous Current, Up To
20Amps Peak Current
* Excellent Gain Characteristic,
Specified Up To 10Amps
* Very Low Saturation Voltages
158
MAXIMUM RATINGS* (T_amb =25^oC, unless otherwise specified)
REF. _Min.
A 6.70
C 2.90
D 0.02
E
0̓
I 0.60
H 0.25
Max.
7.30
3.10
0.10
10̓
0.80
0.35
REF.
B
J
1
2
3
4
5
Min. Max.
13̓TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Symbol
Parameter
Value
Units
V_CBO
Collector-Base Voltage
150
V
VCEO
VEBO
Collector-Emitter Voltage
Emitter-Base Voltage
60
V
6
V
IC
Collector Current (DC)
Collector Current (Pulse)
6
A
20
PD
Total Power Dissipation
3
W
TJ,Tstg
Junction and Storage Temperature
-55~-150
C^O
*The power which can be dissipated assuming the device is mounted in a typical on a P.C.B. with copper equal to 4 square inch min..
ELECTRICAL CHARACTERISTICS Tamb=25^oC unless otherwise specified
Parameter
Symbol Min Typ. Max
Collector-Base Breakdown Voltage
BVCBO 150
-
-
Collector-Emitter Breakdown Voltage *BVCEO
60
-
-
Emitter-Base Breakdown Voltage
BVEBO
6
-
-
Collector-Base Cutoff Current
ICBO
-
-
50
Collector-Base Cutoff Current
ICES
-
-
50
Emitter-Base Cutoff Current
Collector Saturation Voltage
IEBO
-
*VCE(sat)1 -
*VCE(sat)2 -
*VCE(sat)3 -
*VCE(sat)4 -
-
10
-
50
-
100
-
170
-
375
Base Saturation Voltage
*VBE(sat)
-
-
1.2
Base-Emitter Voltage
*VBE(on)
-
-
*hFE1
100
-
1.15
-
DC Current Gain
*hFE2
*hFE3
100 200 300
75
-
-
*hFE4
25
-
-
Gain-Bandwidth Product
fT
-
130
-
Output Capacitance
Cob
-
45
-
On-Time
Ton
-
45
-
Off-Time
Toff
-
1100
-
*Measured under pulse condition. Pulse widthЉ300ȝs, Duty CycleЉ2%
Spice parameter data is available upon request for this device.
http://www.SeCoSGmbH.com
Uni
V
V
V
nA
nA
nA
mV
V
V
MHz
pF
Test Conditions
IC= 100µA, IE=0
IC= 10mA, IB=0
IE= 100µA, IC=0
VCB= 120V, IE=0
VCES=60V
VEB= 6V, IC=0
IC= 100mA, IB= 5mA
IC= 1A, IB= 50mA
IC= 2A, IB= 50mA
IC= 6A, IB= 300mA
IC= 6A, IB= 300mA
VCE= 1V, IC= 6A
VCE= 1V, IC= 10mA
VCE= 1V, IC= 2A
VCE= 1V, IC= 5A
VCE= 1V, IC= 10A
VCE= 10V, IC= 100mA, f=50MHz
VCB= 10V, IE=0, f=1MHz
nS _{VCC=10V,IC=1A,IB1=IB2=100mA}
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
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