PZT13003_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – NPN Silicon Medium Power Transistor

Elektronische Bauelemente
PZT13003
1.5A , 700V
NPN Silicon Medium Power Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
 For AF driver and output stages
 Power switching applications
CLASSIFICATION OF h_FE
Product-Rank PZT13003-A
Range
8~20
PZT13003-B
15~30
PZT13003-C
25~40
PACKAGE INFORMATION
Package
MPQ
SOT-223
2.5K
Leader Size
13 inch
SOT-223
A
M
4
Top View _{C B}
K
L
E
1
2
3
D
F
GH
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
6.20 6.70
6.70 7.30
3.30 3.70
1.42 1.90
4.50 4.70
0.60 0.82
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
-
0.10
-
-
0.25 0.35
-
-
2.30 REF.
2.90 3.10
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction, Storage Temperature
V_CBO
V_CEO
V_EBO
I_C
P_D
T_J, T_STG
700
450
9
1.5
1.25
150, -55~150
Unit
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Symbol Min.
Max.
Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter-Base Cutoff Current
DC current gain
Collector-emitter saturation voltage¹
Base-emitter voltage
ON-Time
Storage time
Fall time
Transition frequency
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
V_BE(on)
T_(on)
t_S
t_f
f_T
700
450
9
8
4
V
V
V
0.1
mA
0.05
mA
40
1
V
1.2
V
1
μS
4
μS
0.7
μS
MHz
Test Conditions
I_C=1mA , I_E=0
I_C=10mA, I_B=0
I_E=1mA, I_C=0
V_CB=700V, I_E=0
V_EB=9V, I_C=0
V_CE=10V, I_C=0.5A
I_C=1A, I_B=250mA
I_C=1A, I_B=250mA
V_CE=10V, I_C=2A
I_B1=I_B2=400mA
V_CE=10V, I_C=500mA, f=1.0MH_Z
http://www.SeCoSGmbH.com/
19-Jan-2012 Rev. A
Any changes of specification will not be informed individually.
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