MPSA06 Datasheet, PDF (1/3 Pages) NXP Semiconductors – NPN general purpose transistor

Elektronische Bauelemente
MPSA06
NPN
Plastic-Encapsulate Transistor
FEATURES
*Low current (max. 500 mA)
*Low voltage (max. 80 V).
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
4.55±0.2
TO-92
3.5±0.2
APPLICATIONS
*General purpose switching and amplification.
DESCRIPTION
NPN transistor in a TO-92; plastic package.
PNP complement: MPSA56.
0.46±0.1
0.43+–00..0078
(1.27 Typ.)
1.25±0.2
12 3
2.54±0.1
1: Emitter
2: Base
3: Collector
Symbol
P_CM
I CM
V(BR)CBO
Tstg
TJ
Parameter
Power Dissipation
Collector Current
Collector-Base Voltage
Storage Temperature
Junction Temperature
Value
0.625
0.5
80
-55~+150
150
Units
W
A
V
C^O
C^O
ELECTRICAL CHARACTERISTICS (Tamb=25 ^oC unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_CEO
I_EBO
H_FE(1)
V_CE(sat)
V_BE(sat)
Test conditions
Ic=100µA, I_E=0
I_C= 1mA , I_B=0
I_E=100µA, I_C=0
V_CB=60V, I_E=0
V_CE=60V, I_B=0
V_EB=3V, I_C=0
V_CE=1V, I_C= 100mA
I_C=100 mA, I_B=10mA
I_C= 100 mA, I_B=10mA
MIN
80
80
4
100
MAX UNIT
V
V
V
0.1
µA
0.1
µA
0.1
µA
200
0.25
V
1.2
V
Transition frequency
f_T
V_CE= 2 V, I_C= 10mA
100
f = 100MHz
MHz
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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