MPS751 Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – Silicon PNP Transistor

Elektronische Bauelemente
MPS751
-2A , -80V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Switching and amplifier applications
TO-92
2
Base
Collector
3
1
Emitter
1Emitter
2Base
3Collect
REF.
A
B
C
D
E
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70 14.5
3.30 3.81
0.36 0.56
REF.
F
G
H
J
Millimeter
Min. Max.
0.30 0.51
1.27 TYP.
1.10 1.40
2.42 2.66
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Parameter
Symbol
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Continuous Collector Current
IC
Collector Dissipation
PC
Thermal Resistance from Junction to Ambient
RθJA
Junction and Storage Temperature
TJ, TSTG
Rating
-80
-60
-5
-2
625
200
150, -55~150
Unit
V
V
V
A
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max.
Collector to Base Breakdown Voltage
V(BR)CBO
-80
-
-
Collector to Emitter Breakdown Voltage ¹ V(BR)CEO
-60
-
-
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
V(BR)EBO
-5
ICBO
-
-
-
-
-0.1
Emitter Cut-Off Current
IEBO
-
-
-0.1
75
-
-
DC Current Gain ¹
75
-
-
hFE
75
-
-
40
-
-
Collector to Emitter Saturation Voltage ¹
VCE(sat)
-
-
Base to Emitter Saturation Voltage ¹
Base to Emitter Voltage ¹
VBE (sat)
-
VBE(on)
-
Transition Frequency
fT
-
Notes:
1. Pulse test: pulse width≦300µs, duty cycle=2.0%.
-
-0.5
-
-0.3
-
-1.2
-
-1
75
-
Unit Test Condition
V
V
V
µA
µA
V
V
V
MHz
IC= -100µA, IE=0
IC= -10mA, IB=0
IE= -10µA, IC=0
VCB= -80V, IE=0
VEB= -4V, IC=0
VCE= -2V, IC= -50mA
VCE= -2V, IC= -500mA
VCE= -2V, IC= -1A
VCE= -2V, IC= -2A
IC= -2A, IB= -200mA
IC= -1A, IB= -100mA
IC= -1A, IB= -100mA
IC= -1A, VCE= -2V
VCE= -5V, IC= -50mA, f=100MHz
http://www.SeCoSGmbH.com/
14-Jun-2016 Rev. A
Any changes of specification will not be informed individually.
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