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| MPS2907A Datasheet, PDF (1/5 Pages) Samsung semiconductor – PNP (GENERAL PURPOSE TRANSISTOR) | |||
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Elektronische Bauelemente
MPS2907A
PNP Silicon
General Purpose Transistor
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
COLLECTOR
3
2
ÆFEATURES
BASE
. Epitaxial Planar Die Construction
. Complementary NPN Type Available
(MPS2222A)
. Ideal for Medium Power Amplification and Switching
1
EMITTER
TO-92
1
2
3
ÆMAXIMUM RATINGS
RATING
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current - Continuous
Total Device Dissipation @ TA = 25 к
Derate Above 25 к
Total Device Dissipation @ TC = 25 к
Derate Above 25 к
Operating and Storage Junction Temperature Range
SYMBOL
VCEO
VCBO
VEBO
IC
PD
PD
TJ, TSTG
VALUE
-60
-60
-5.0
-600
625
5.0
1.5
12
-55 ~ +150
UNIT
V
V
V
mA
mW
mW / к
Watts
mW / к
к
ÆTHERMAL CHARACTERISTICS
CHARACTERISTIC
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
SYMBOL
RÈJA
RÈJC
MAX.
200
83.3
UNIT
к/W
к/W
ÆELECTRICAL CHARACTERISTICS (TA = 25 к unless otherwise noted)
CHARACTERISTIC
SYMBOL
Min.
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage(1)
(IC = -10 mA, IB = 0)
Collector - Base Breakdown Voltage
(IC = -10 µA, IE = 0)
Emitter - Base Breakdown Voltage
(IE = -10 µA, IC = 0)
Collector Cut-off Current
(VCE = -50 V, VEB(oFF) = -0.5 V)
Collector Cut-off Current
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICEX
-40
-60
-5.0
-
(VCB = -50 V, IE = 0)
(VCB = -50 V, IE = 0, TA = 150 к)
Emitter Cut-off Current
(VEB = -3.0 V, IC = 0)
Collector Cut-off Current
(VCE = -35 V)
Base Cut-off Current
(VCE = -30 V, VEB(oFF) = -0.5 V)
1. Pulse Test: Pulse Width  300 µs, Duty Cycle  2.0 %.
ICBO
-
-
IEBO
-
ICEO
-
IBEX
-
Max.
-
-
-
-50
-0.10
-15
-100
-100
-50
UNIT
V
V
V
nA
µA
nA
nA
nA
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 5
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