MPS2222A Datasheet, PDF (1/6 Pages) Samsung semiconductor – NPN EPITAXIAL SILICON TRANSISTOR(GENERAL PURPOSE TRANSISTOR)

Elektronische Bauelemente
MPS2222A
NPN Silicon
General Purpose Transistor
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
COLLECTOR
3
2
ƔFEATURES
BASE
. Epitaxial Planar Die Construction
. Complementary PNP Type Available
(MPS2907A)
. Ideal for Medium Power Amplification and Switching
1
EMITTER
TO-92
1
2
3
ƔMAXIMUM RATINGS
RATING
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current - Continuous
Total Device Dissipation @ TA = 25 к
Derate Above 25 к
Total Device Dissipation @ TC = 25 к
Derate Above 25 к
Operating and Storage Junction Temperature Range
SYMBOL
VCEO
VCBO
VEBO
IC
PD
PD
TJ, TSTG
VALUE
40
75
6.0
600
625
5.0
1.5
12
-55 ~ +150
UNIT
V
V
V
mA
mW
mW / к
Watts
mW / к
к
ƔTHERMAL CHARACTERISTICS
CHARACTERISTIC
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
SYMBOL
RșJA
RșJC
MAX.
200
83.3
UNIT
к/W
к/W
ƔELECTRICAL CHARACTERISTICS (T_A = 25 к unless otherwise noted)
CHARACTERISTIC
SYMBOL
Min.
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage
(IC = 10 mA, IB = 0)
Collector - Base Breakdown Voltage
(IC = 10 µA, IE = 0)
Emitter - Base Breakdown Voltage
(IE = 10 µA, IC = 0)
Collector Cutoff Current
(VCE = 60 V, VEB(oFF) = 3.0 V)
Collector Cutoff Current
V(BR)CEO
40
V(BR)CBO
75
V(BR)EBO
6.0
ICEX
-
(VCB = 60 V, IE = 0)
(VCB = 60 V, IE = 0, TA = 150 к)
Emitter Cutoff Current
(VEB = 3.0 V, IC = 0)
Collector Cutoff Current
(VCE = 10 V)
Base Cutoff Current
(VCE = 60 V, VEB(oFF) = 3.0 V)
ICBO
-
-
IEBO
-
ICEO
-
IBEX
-
Max.
-
-
-
10
0.01
10
10
10
20
UNIT
V
V
V
nA
µA
nA
nA
nA
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page1 of 6