MMDT5401 Datasheet, PDF (1/2 Pages) Diodes Incorporated – DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Elektronische Bauelemente
MMDT5401
Plastic-Encapsulate
Multi-Chip (PNP+PNP) Transistor
RoHS Compliant Product
SOT-363
Features
* Epitaxial Planar Die Construction
* Complementary NPN Type Available (MMDT5551)
.055(1.40)
.047(1.20)
8^o
.026TYP
0^o
(0.65TYP)
.021REF
(0.525)REF
.096(2.45)
.085(2.15)
.053(1.35)
.045(1.15)
C₂
B₁
E₁
E₂
B₂
C₁
.014(0.35)
.006(0.15)
.087(2.20)
.079(2.00)
.043(1.10)
.035(0.90)
.018(0.46)
.010(0.26)
.006(0.15)
.003(0.08)
.004(0.10)
.000(0.00)
.039(1.00)
.035(0.90)
Marking : K4M
Dimensions in inches and (millimeters)
Absolute Maximum Ratings (Tamb=25^oC unless other wise specified)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Dissipation
Operating Junction and Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj, Tstg
Ratings
-160
-150
-5
-0.2
0.2
-55~+150
Unit
V
V
V
A
W
o_C
ELECTRICAL CHARACTERISTICS (Tamb=25^oC unless other wise specified)
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE(1)
h_FE(2)
h_FE(3)
V_CE(sat)1
V_CE(sat)2
V_BE(sat)1
V_BE(sat)2
I_C=-100µA, I_E=0
I_C= -1mA , I_B=0
I_E=-10µA, I_C=0
V_CB=-120 V , I_E=0
V_EB=-3V , I_C=0
V_CE=-5 V, I_C= -1mA
V_CE=-5 V, I_C= -10mA
V_CE=-5 V, I_C= -50mA
I_C=-10 mA, I_B=-1mA
I_C=-50 mA, I_B=-5mA
I_C= -10 mA, I_B=-1mA
I_C= -50 mA, I_B=-5mA
f_T
V_CE= -10V, I_C= -10mA, f = 100MHz
-160
-150
-5
50
60
50
100
V
V
V
-0.05 µA
-0.05 µA
240
-0.2
V
-0.5
V
-1
V
-1
V
300 MHz
Output Capacitance
Noise Figure
C_ob
V_CB=-10V, I_E= 0 , f=1MHz
NF
VCE^{= -5.0V, I}C^{= -200µA,}
RS= 10 ,f = 1.0kHz
6
pF
8.0
dB
http://www.SeCoSGmbH.com
01-Jan-2006 Rev.B
Any changing of specification will not be informed individual
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