MMDT4944 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – Dual-Chip Plastic Encapsulated Transistor

Elektronische Bauelemente
MMDT4944
NPN+NPN
Dual-Chip Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
z Small package (dual type)
z High voltage and high current
z High h_FE, Excellent h_FE linearity
SOT-353
A
E
L
1
B
PACKAGING INFORMATION
Weight: 0.0081g (approximate)
F
DG
H
C
K
J
MARKING CODE
LY LGR
5
4
Q1
Q2
123
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.00 2.20
2.15 2.45
1.15 1.35
0.90 1.10
1.20 1.40
0.15 0.35
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.100 REF.
0.525 REF.
0.08 0.15
8°
0.650 TYP.
ABSOLUTE MAXIMUM RATINGS (at Ta = 25°C unless otherwise specified)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current – Continuous
Collector Power Dissipation
Junction, Storage Temperature
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
Pc
T_J, T_STG
RATINGS
60
50
5
0.15
0.20
+150, -55 ~ +150
UNIT
V
V
V
A
W
℃
ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified)
PARAMETER
TEST CONDITIONS
SYMBOL
Collector-Base Breakdown Voltage
I_C = 100 µA, I_E = 0
V_(BR)CBO
Collector-Emitter Breakdown Voltage I_C = 1 mA, I_B = 0
V_(BR)CEO
Emitter-Base Breakdown Voltage
I_E = 100 μA, I_C = 0
V_(BR)EBO
Collector Cutoff Current
V_CB = 60 V, I_E = 0
I_CBO
Emitter Cutoff Current
V_EB = 5 V, I_C = 0
I_EBO
Collector-Emitter Saturation Voltage I_C = 100 mA, I_B = 10 mA
V_CE(sat)
DC Current Transfer Ratio
V_CE = 6V, I_C = 2 mA
h_FE
Transition Frequency
V_CE = 10 V, I_C = 1 mA
f_T
Output Capacitance
V_CB = 10 V, I_E = 0, f = 1 MHz
C_OB
MIN.
60
50
5
-
-
-
120
80
-
TYP.
-
-
-
-
-
-
-
-
MAX.
-
-
-
0.1
0.1
0.25
400
-
3.5
UNIT
V
V
V
μA
μA
V
MHz
pF
CLASSIFICATION OF h_FE
Marking
Rank
Range
LY
Y
120 - 240
LGR
GR
200 – 400
http://www.SeCoSGmbH.com/
01-June-2005 Rev. A
Any changes of specification will not be informed individually.
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