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MMDT4403 Datasheet, PDF (1/2 Pages) Transys Electronics – DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Elektronische Bauelemente
MMDT4403
PNP Silicon
Multi-Chip Transistor
RoHS Compliant Product
SOT-363
* Features
Power dissipation.
PCM : 0.2 W (Temp.=25OC)
Collector current
ICM : - 0.6 A
Collector -base voltage
V(BR) CBO : - 40 V
Operating & storage junction temperature
Tj, Tstg : -55OC ~ +150OC
C2
B1
E1
E2
B2
C1
Marking : K2T
.055(1.40)
.047(1.20)
8o
.026TYP
0o
(0.65TYP)
.021REF
(0.525)REF
.096(2.45)
.085(2.15)
.053(1.35)
.045(1.15)
.014(0.35)
.006(0.15)
.087(2.20)
.079(2.00)
.043(1.10)
.035(0.90)
.018(0.46)
.010(0.26)
.006(0.15)
.003(0.08)
.004(0.10)
.000(0.00)
.039(1.00)
.035(0.90)
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS˄Tamb=25ćunless otherwise specified˅
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output Capacitance
Delay time
Rise time
Storage time
Fall time
Symbol Test conditions
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
hFE(3)
hFE(4)
hFE(5)
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
fT
Cob
td
tr
tS
tf
Ic=-100µA , IE=0
IC= -1mA , IB=0
IE=-100µA, IC=0
VCB=-50 V , IE=0
VCE=-35 V , IB=0
VEB=-5V , IC=0
VCE=-1 V, IC= -0.1mA
VCE=-1 V, IC= -1mA
VCE=-1 V, IC= -10mA
VCE=-2 V, IC= -150mA
VCE=-2 V, IC= -500mA
IC=-150 mA, IB=-15mA
IC=-500 mA, IB=-50mA
IC= -150 mA, IB=-15mA
IC= -500 mA, IB=-50mA
VCE= -10V, IC= -20mA
f = 100MHz
VCB=-10V, IE= 0
f=1MHz
VCC=-30V, VBE=-2V
IC=-150mA , IB1=-15mA
VCC=-30V, IC=-150mA
IB1= IB2= -15mA
MIN
-40
-40
-5
30
60
100
100
20
-0.75
TYP
MAX
-0.1
-0.1
-0.1
300
-0.4
-0.75
-0.95
-1.3
UNIT
V
V
V
µA
µA
µA
V
V
V
V
200
MHz
8.5
pF
15
nS
20
nS
225 nS
30
nS
http://www.SeCoSGmbH.com
01-Jan-2006 Rev.B
Any changing of specification will not be informed individual
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