MMDT4401_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – Multi-Chip Transistor

Elektronische Bauelemente
MMDT4401
NPN Plastic-Encapsulate
Multi-Chip Transistor
RoHS Compliant Product
SOT-363
* Features
Power Dissipation.
.055(1.40)
.047(1.20)
8^o
.026TYP
0^o
(0.65TYP)
.021REF
(0.525)REF
PCM : 0.2 W (Temp.=25^OC)
Collector Current
ICM : 0.6 A
Collector-Base vVoltage
V(BR) CBO : 60 V
Operating & Storage Junction Temperature
Tj,T stg : -55^OC ~ +150^OC
C₂
B₁
E₁
E₂
B₂
C₁
Marking : K2X
.096(2.45)
.085(2.15)
.053(1.35)
.045(1.15)
.014(0.35)
.006(0.15)
.087(2.20)
.079(2.00)
.043(1.10)
.035(0.90)
.018(0.46)
.010(0.26)
.006(0.15)
.003(0.08)
.004(0.10)
.000(0.00)
.039(1.00)
.035(0.90)
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS˄Tamb=25ćunless otherwise specified˅
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output Capacitance
Delay time
Rise time
Storage time
Fall time
Symbol Test conditions
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_CEO
I_EBO
h_FE(1)
h_FE(2)
h_FE(3)
h_FE(4)
h_FE(5)
V_CE(sat)1
V_CE(sat)2
V_BE(sat)1
V_BE(sat)2
f_T
C_ob
t_d
t_r
t_S
t_f
Ic=100µA , I_E=0
I_C= 1mA , I_B=0
I_E=100µA, I_C=0
V_CB=50 V , I_E=0
V_CE=35 V , I_B=0
V_EB=5V , I_C=0
V_CE=1 V, I_C= 0.1mA
V_CE=1 V, I_C= 1mA
V_CE=1 V, I_C= 10mA
V_CE=1 V, I_C= 150mA
V_CE=2 V, I_C= 500mA
I_C=150 mA, I_B=15mA
I_C=500 mA, I_B=50mA
I_C= 150 mA, I_B=15mA
I_C= 500 mA, I_B=50mA
V_CE= 10V, I_C= 20mA
f = 100MHz
V_CB=5V, I_E= 0
f=1MHz
V_CC=30V, V_BE=2V
I_C=150mA , I_B1=15mA
V_CC=30V, I_C=150mA
I_B1= I_B2= 15mA
MIN TYP MAX UNIT
60
V
40
V
6
V
0.1
µA
0.1
µA
0.1
µA
20
40
80
100
300
40
0.4
V
0.75
V
0.75
0.95
V
1.2
V
250
MHz
6.5
pF
15
nS
20
nS
225
nS
30
nS
http://www.SeCoSGmbH.com
01-Jan-2006 Rev.B
Any changing of specification will not be informed individual
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