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MMDT3906 Datasheet, PDF (1/2 Pages) Transys Electronics – DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Elektronische Bauelemente
MMDT3906
PNP Silicon
Multi-Chip Transistor
* Features
RoHS Compliant Product
$VXIIL[RI&VSHFLILHVKDORJHQ OHDGIUHH
Power dissipation.
PCM : 0.2 W (Tamp.=25OC)
Collector current
ICM : - 0.2 A
Collector -base voltage
V(BR) CBO : - 40 V
Operating & storage junction temperature
Tj, Tstg : -55OC ~ +150OC
C2
B1
E1
E2
B2
C1
Marking : K3N or A2
SOT-363
.055(1.40)
.047(1.20)
8o
.026TYP
0o
(0.65TYP)
.021REF
(0.525)REF
.096(2.45)
.085(2.15)
.053(1.35
.045(1.15
.014(0.35)
.006(0.15)
.087(2.20)
.079(2.00)
.043(1.10)
.035(0.90)
.018(0.46)
.010(0.26)
.006(0.15)
.003(0.08)
.004(0.10)
.000(0.00)
.039(1.00)
.035(0.90)
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS˄Tamb=25ćunless otherwise specified˅
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
hFE(4)
hFE(5)
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
fT
Cob
NF
Ic=-10­A,IE=0
Ic=-1mA,IB=0
IE=-10­A,IC=0
VCB=-30V,IE=0
VEB=-5V,IC=0
VCE=-1V,IC=-0.1mA
VCE=-1V,IC=-1mA
VCE=-1V,IC=-10mA
VCE=-1V,IC=-50mA
VCE=-1V,IC=-100mA
IC=-10mA,IB=-1mA
IC=-50mA,IB=-5mA
IC=-10mA,IB=-1mA
IC=-50mA,IB=-5mA
VCE=-20V,IC=-10mA,f=100MHz
VCB=-5V,IE=0,f=1MHz
VCE=-5V,Ic=-0.1mA,
f=1KHZ,Rg=1K¡
-40
-40
-5
60
80
100
60
30
-0.65
250
Delay time
Rise time
Storage time
Fall time
td
VCC=-3V, VBE=0.5V
tr
IC=-10mA , IB1=-IB2=- 1mA
tS
VCC=-3V, IC=-10mA
tf
IB1=-IB2=- 1mA
TYP MAX UNIT
V
V
V
-0.05 ­A
-0.05 ­A
300
-0.25 V
-0.4 V
-0.85 V
-0.95 V
MHz
4.5
pF
4
dB
35
nS
35
nS
225 nS
75
nS
http://www.SeCoSGmbH.com
06-May-2010 Rev.C
Any changing of specification will not be informed individual
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