MMDT3904 Datasheet, PDF (1/2 Pages) Transys Electronics – DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Elektronische Bauelemente
MMDT3904
NPN Silicon
Multi-Chip Transistor
* Features
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
Power dissipation
PCM : 0.2 W (Tamp.= 25 ^OC)
Collector current
ICM : 0.2 A
Collector-base voltage
V(BR)CBO : 60 V
Operating & Storage junction Temperature
Tj, Tstg : -55^OC~ +150^OC
C₂
B₁
E₁
E₂
B₂
C₁
SOT-363
.055(1.40)
.047(1.20)
8^o
.026TYP
0^o
(0.65TYP)
.021REF
(0.525)REF
.096(2.45)
.085(2.15)
.053(1.35
.045(1.15
.014(0.35)
.006(0.15)
.087(2.20)
.079(2.00)
.043(1.10)
.035(0.90)
.018(0.46)
.010(0.26)
.006(0.15)
.003(0.08)
.004(0.10)
.000(0.00)
.039(1.00)
.035(0.90)
Marking: K6N or MA
Dimensions in inches and (millimeters)
ElECTRICAL CHARACTERISTICS ( Tamp.=25^OC unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_CEO
I_EBO
Test conditions
Ic= 10 μA， I_E=0
Ic= 1 mA， I_B=0
I_E= 10μA， I_C=0
V_CB= 30 V , I_E=0
V_CE= 30 V , I_B=0
V_EB= 5V , I_C=0
MIN
MAX
UNIT
60
V
40
V
5
V
0.05
μA
0.05
μA
0.05
μA
DC current gain
h_FE（₁）
h_FE（₂）
V_CE= 1V, I_C= 10mA
V_CE= 1V, I_C= 50mA
100
300
60
Collector-emitter saturation voltage
V_CE(sat) I_C=50 mA, I_B= 5mA
0.3
V
Base-emitter saturation voltage
Transition frequency
Output Capacitance
Delay time
Rise time
Storage time
Fall time
V_BE(sat)
f_T
C_ob
t_d
t_r
t_S
t_f
I_C= 50 mA, I_B= 5mA
V_CE= 20V, I_C= 10mA
f=100MHz
V_CB=5V, I_E= 0
f=1MHz
V_CC=3V, V_BE=0.5V
I_C=10mA , I_B1=1mA
V_CC=3V, I_C=10mA
I_B1= I_B2= 1mA
0.95
V
300
MHz
4
pF
35
nS
35
nS
200
nS
50
nS
http://www.SeCoSGmbH.com
06-May-2010 Rev. C
Any changing of specification will not be informed individual
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