English
Language : 

MMDT2907A Datasheet, PDF (1/3 Pages) Diodes Incorporated – DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Elektronische Bauelemente
MMDT2907A
PNP Silicon
Multi-Chip Transistor
* Features
RoHS Compliant Product
A suffix of "-C" specifies halogen-free
Power dissipation
PCM : 0.15 W (Tamp.= 25 OC)
Collector current
ICM : -0.6 A
Collector-base voltage
V(BR)CBO : -60 V
Operating & Storage junction Temperature
Tj, Tstg : -55OC~ +150OC
C2
B1
E1
E2
B2
C1
Marking: K2F, 2F
SOT-363
.055(1.40)
.047(1.20)
8o
.026TYP
0o
(0.65TYP)
.021REF
(0.525)REF
.096(2.45)
.085(2.15)
.053(1.35)
.045(1.15)
.014(0.35)
.006(0.15)
.087(2.20)
.079(2.00)
.043(1.10)
.035(0.90)
.018(0.46)
.010(0.26)
.006(0.15)
.003(0.08)
.004(0.10)
.000(0.00)
.039(1.00)
.035(0.90)
Dimensions in inches and (millimeters)
Electrical Characteristics( Tamb=25OC unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output Capacitance
Input Capacitance
Delay time
Rise time
Storage time
Fall time
Symbol
Test conditions
MIN
V(BR)CBO
Ic= -10μA， IE=0
-60
V(BR)CEO
Ic= -10mA， IB=0
-60
V(BR)EBO
IE=-10μA， IC=0
-5
ICBO
VCB=-50 V , IE=0
IEBO
VEB= -3V , IC=0
hFE(1)
VCE=-10V, IC= -0.1mA
75
hFE(2)
VCE=-10V, IC= -1mA
100
hFE(3)
VCE=-10V, IC=-10mA
100
hFE(4)
VCE=-10V, IC= -150mA
100
hFE(5)
VCE=-10V, IC=-500mA
50
VCE(sat)1 IC=-150 mA, IB=-15mA
VCE(sat)2 IC=-500 mA, IB=- 50mA
VBE(sat)1 IC=-150 mA, IB=-15mA
VBE(sat)2 IC=-500 mA, IB= -50mA
fT
VCE=-20V, IC= -50mA
f=100MHz
200
Cob
VCB=-10V, IE= 0
f=1MHz
Cib
VEB=-2V, IC= 0
f=1MHz
td
VCC=-30V,
tr
IC=-150mA,IB1=-15mA
tS
VCC=-6V, IC=-150mA
tf
IB1= IB2= -15mA
MAX
-0. 01
-0. 01
UNIT
V
V
V
μA
μA
300
-0.4
V
-1.6
V
-1.3
V
-2.6
V
MHz
8
pF
30
pF
10
nS
40
nS
225
nS
60
nS
http://www.SeCoSGmbH.com
01-Jan-2007 Rev. C
Any changing of specification will not be informed individual
Page 1 of 3
 ▷