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| MMDT2222A Datasheet, PDF (1/4 Pages) Transys Electronics – DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR | |||
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Elektronische Bauelemente
RoHS Compliant Product
MMDT2222A
NPN Silicon
Multi-Chip Transistor
SOT-363
* Features
Power dissipation
PCM : 0.15 W (Tamp.= 25O C)
.055(1.40)
.047(1.20)
8o
.026TYP
0o
(0.65TYP)
.021REF
(0.525)REF
.096(2.45)
.085(2.15)
.053(1.35)
.045(1.15)
Collector current
ICM : 0.6 A
Collector-base voltage
V(BR)CBO : 75 V
C1
B2
E2
.014(0.35)
.006(0.15)
.087(2.20)
.079(2.00)
.018(0.46)
.010(0.26)
.006(0.15)
.003(0.08)
.004(0.10)
.000(0.00)
Operating & Storage junction Temperature
E1
B1
C2
.043(1.10)
.035(0.90)
.039(1.00)
.035(0.90)
Tj, Tstg : -55OC~ +150OC
Marking: K1P
Dimensions in inches and (millimeters)
Electrical Characteristics( Tamb=25OC unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output Capacitance
Input Capacitance
Noise Figure
Delay time
Rise time
Storage time
Fall time
http://www.SeCoSGmbH.com
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
hFE(4)
hFE(5)
hFE(6)
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
fT
Cob
Cib
NF
td
tr
tS
tf
Test conditions
Ic= 10μAï¼ IE=0
Ic= 10mAï¼ IB=0
IE=10μAï¼ IC=0
VCB=60 V , IE=0
VEB= 3V , IC=0
VCE=10V, IC= 0.1mA
VCE=10V, IC= 1mA
VCE=10V, IC= 10mA
VCE=10V, IC= 150mA
VCE=10V, IC= 500mA
VCE=1V, IC= 150mA
IC=150 mA, IB= 15mA
IC=500 mA, IB= 50mA
IC=150 mA, IB=15mA
IC=500 mA, IB= 50mA
VCE=20V, IC= 20mA
f=100MHz
VCB=10V, IE= 0
f=1MHz
VEB=0.5V, IC= 0
f=1MHz
VCE=10V, IC=100μA
f=1KHz,Rs=1KΩ
VCC=30V, IC=150mA
VBE(off)=0.5V,IB1=15mA
VCC=30V, IC=150mA
IB1= IB2= 15mA
MIN
MAX
UNIT
75
V
40
V
6
V
0. 01
μA
0. 01
μA
35
50
75
100
300
40
35
0.3
V
1
V
0.6
1.2
V
2
V
300
MHz
8
pF
25
pF
4
dB
10
nS
25
nS
225
nS
60
nS
Any changing of specification will not be informed individual
01-Jan-2006 Rev. B
Page 1 of 4
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