MMBTA94_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

Elektronische Bauelemente
MMBTA94
PNP Silicon
-400V, -0.1A, 350mW
Epitaxial Transistor
FEATURES
 High Voltage Transistor
MARKING
4D
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-23
A
L
3
Top View
CB
1
1
2
K
E
3
2
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
Leader Size
7 inch
F
Collector


Base
D
G
H
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.04
2.10 2.80
1.20 1.60
0.89 1.40
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
-
0.18
0.40 0.60
0.08 0.20
0.6 REF.
0.85 1.15
MAXIMUM RATINGS ( TA = 25°C unless otherwise specified)

Emitter
PARAMETER
SYMBOL
RATINGS
UNIT
Collector - Base Voltage
V_CBO
-400
V
Collector - Emitter Voltage
V_CEO
-400
V
Emitter - Base Voltage
V_EBO
-5
V
Collector Current - Continuous
I_C
-0.1
A
Collector Power Dissipation
P_C
350
mW
Junction, Storage Temperature
T_J, T_STG
150, -55~150
℃
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain¹
Collector-Emitter Saturation Voltage¹
Base-Emitter Saturation Voltage¹
Transition frequency
Note:
1. Pulse test
TEST CONDITIONS
I_C =100µA, I_E =0
I_C = -1mA, I_B =0
I_E = -100µA, I_C =0
V_CB = -400V, I_E =0
V_EB = -4V, I_C =0
V_CE = -10V, I_C = -1mA
V_CE = -10V, I_C = -10mA
V_CE = -10V, I_C = -50mA
V_CE = -10V, I_C = -100mA
I_C = -10mA, I_B = -1mA
I_C = -50mA, I_B = -5mA
I_C = -10mA, I_B = -1mA
V_CE = -20V, I_C = -10mA
SYMBOL
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
V_BE(sat)
f_T
MIN.
-400
-400
-5
-
-
70
80
40
40
-
-
-
50
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
-
-
-
-0.1
-0.1
-
300
-
-
-0.2
-0.3
-0.75
-
UNIT
V
V
V
µA
µA
V
V
V
MHz
http://www.SeCoSGmbH.com/
01-Oct-2013 Rev. B
Any changes of specification will not be informed individually.
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