MMBTA94 Datasheet, PDF (1/2 Pages) Avic Technology – SOT-23-3L Plastic-Encapsulate Transistors

Elektronische Bauelemente
MMBTA94
PNP Silicon
-400V, -0.1A, 350mW
Epitaxial Transistor
FEATURES
 High Voltage Transistor
MARKING
Product
MMBTA44
Marking Code
4D
SYMBOL
Collector


Base
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-23
A
L
3
Top View
CB
1
1
2
K
E
D
F
G
H
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.04
2.10 2.80
1.20 1.60
0.89 1.40
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
-
0.18
0.40 0.60
0.08 0.20
0.6 REF.
0.85 1.15

Emitter
MAXIMUM RATINGS (at TA = 25°C unless otherwise specified)
PARAMETER
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J, T_STG
RATINGS
-400
-400
-5
-0.1
350
150, -55~150
UNIT
V
V
V
A
mW
℃
ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition frequency
*Pulse test
TEST CONDITIONS
I_C =100µA, I_E =0
I_C = -1mA, I_B =0
I_E = -100µA, I_C =0
V_CB = -400V, I_E =0
V_EB = -4V, I_C =0
V_CE = -10V, I_C = -1mA
V_CE = -10V, I_C = -10mA
V_CE = -10V, I_C = -50mA
V_CE = -10V, I_C = -100mA
I_C = -10mA, I_B = -1mA
I_C = -50mA, I_B = -5mA
I_C = -10mA, I_B = -1mA
V_CE = -20V, I_C = -10mA
SYMBOL
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE1*
h_FE2*
h_FE3*
h_FE4*
V_CE(sat)1*
V_CE(sat)2*
V_BE(sat)*
f_T
MIN.
-400
-400
-5
-
-
70
80
40
40
-
-
-
50
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
-
-
-
-0.1
-0.1
-
300
-
-
-0.2
-0.3
-0.75
-
UNIT
V
V
V
µA
µA
V
V
V
MHz
http://www.SeCoSGmbH.com/
15-Oct-2010 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 2