MMBTA92_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

Elektronische Bauelemente
MMBTA92
PNP Silicon
General Purpose Transistor
FEATURES
Pb-free is available.
Power dissipation & Collector current
Pcm: 0.3W Icm: -0.3A
High voltage V(BR): -300V
COLLECTOR
3
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
A
L
3
Top View
1
2
BS
1
BASE
2
EMITTER
V
3
1
2
D
G
C
H
K
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
J
All Dimension in mm
ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO Ic= -100uAđ IE=0
-300
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
V(BR)CEO Ic= -1 m Ađ IB=0
V(BR)EBO IE= -100XAđ IC=0
-300
-5
Collector cut-off current
ICBO
VCB=-200 V , IE=0
Emitter cut-off current
IEBO
VEB= -5V , IC=0
HFEč1Ď V_CE= -10V, I_C= - 1mA
60
DC current gain
HFEč2Ď V_CE= -10V, I_C=-10mA
100
HFEč3Ď V_CE=-10V, I_C=-30mA
60
Collector-emitter saturation voltage
VCE(sat) IC=-20 mA, IB= -2m A
Base-emitter saturation voltage
Transition frequency
VBE(sat) IC= -20 m A, IB=-2m A
VCE=-20V, IC=-10mA
fT
50
f=30MHz
MAX UNIT
V
V
V
-0.25 È°A
-0.1
È°A
200
-0.2
V
-0.9
V
MHz
DEVICE MARKING
MMBTA92=2D
http://www.SeCoSGmbH.com
01-Jun-2004 Rev.B
Any changing of specification will not be informed individual
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