MMBTA92W_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – General Purpose Transistor

Elektronische Bauelemente
MMBTA92W
PNP Silicon
General Purpose Transistor
FEATURES
n _{RoHS Compliant Product}
n _{Power dissipation & Collector current}
n _{Pcm: 0.2W Icm: -0.3A}
n _{High voltage V(BR): -300V}
2. Base
3. Collector
1.Emitter
A
L
Top View
BS
V
G
C
D
H
K
SOT-323
Dim Min Max
A 1.800 2.200
B 1.150 1.350
C 0.800 1.000
D 0.300 0.400
G 1.200 1.400
H 0.000 0.100
J 0.100 0.250
K 0.350 0.500
J
L 0.590 0.720
S 2.000 2.400
V 0.280 0.420
All Dimension in mm
č ¥ Ď ELECTRICAL CHARACTERISTICS Tamb=25
unless otherwise specified
Parameter
Symbol
Test conditions
MIN
MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
V(BR)CBO Ic= -100uAđ IE=0
V(BR)CEO Ic= -1 m Ađ IB=0
V(BR)EBO IE= -100XAđ IC=0
ICBO
VCB=-200 V , IE=0
IEBO
VEB= -5V , IC=0
HFEč1Ď V_CE= -10V, I_C= - 1mA
HFEč2Ď V_CE= -10V, I_C=-10mA
HFEč3Ď V_CE=-10V, I_C=-30mA
VCE(sat) IC=-20 mA, IB= -2m A
-300
-300
-5
-0.25
-0.1
60
100
200
60
-0.2
V
V
V
È°A
È°A
V
Base-emitter saturation voltage
Transition frequency
VBE(sat) IC= -20 m A, IB=-2m A
-0.9
V
VCE=-20V, IC=-10mA
fT
50
f=30MHz
MHz
DEVICE MARKING
MMBTA92W=K3R
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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