MMBTA56_15 Datasheet, PDF (1/1 Pages) SeCoS Halbleitertechnologie GmbH – PNP Plastic Encapsulated Transistor

Elektronische Bauelemente
MMBTA56
-0.5A , -80V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
General Purpose Amplifier Applications
MARKING
2GM
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
Leader Size
7’ inch
SOT-23
A
L
3
Top View
CB
1
1
2
K
E
D
F
G
H
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.04
2.10 2.80
1.20 1.60
0.89 1.40
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
-
0.18
0.40 0.60
0.08 0.20
0.6 REF.
0.85 1.15
Collector
3
1
Base
2
Emitter
MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction
To Ambient
Junction, Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ, TSTG
Ratings
-80
-80
-4
-500
225
555
150, -55~150
Unit
V
V
V
mA
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector-Base Breakdown Voltage
V(BR)CBO
-80
Collector-Emitter Breakdown Voltage
V(BR)CEO
-80
Emitter-Base Breakdown Voltage
V(BR)EBO
-4
Collector Cut-Off Current
ICBO
-
Collector Cut-Off Current
ICEO
-
Emitter Cut-Off Current
IEBO
-
DC Current Gain
hFE1
100
hFE2
100
Collector-Emitter Saturation Voltage
VCE(sat)
-
Base-Emitter Saturation Voltage
VBE
-
Transition frequency
fT
50
-
-
V IC= -100µA, IE=0
-
-
V IC= -1mA, IB=0
-
-
V IE= -100µA, IC=0
-
-0.1
µA VCB= -80V, IE=0
-
-0.1
µA VCE= -60V, IB=0
-
-0.1
µA VEB= -4V, IC=0
-
400
VCE= -1V, IC= -10mA
-
-
VCE= -1V, IC= -100mA
-
-0.25
V IC= -100mA, IB = -10mA
-
-1.2
V VCE= -1V, IC= -100mA
-
-
MHz VCE= -1V,IC= -100mA, f=100MHz
http://www.SeCoSGmbH.com/
11-Jul-2011 Rev. A
Any changes of specification will not be informed individually.
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