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MMBTA44 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – SOT-23-3L Plastic-Encapsulate Transistors
Elektronische Bauelemente
MMBTA44
NPN Silicon
500V, 0.1A, 350mW
Epitaxial Transistor
FEATURES
 High Voltage Transistor
MARKING
Product
MMBTA44
Marking Code
3D
SYMBOL
Collector


Base
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-23
A
L
3
Top View
CB
1
1
2
K
E
D
F
G
H
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.04
2.10 2.80
1.20 1.60
0.89 1.40
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
-
0.18
0.40 0.60
0.08 0.20
0.6 REF.
0.85 1.15

Emitter
MAXIMUM RATINGS (at TA = 25°C unless otherwise specified)
PARAMETER
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
RATINGS
500
400
6
0.1
350
150, -55~150
UNIT
V
V
V
A
mW
℃
ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Input Capacitance
*Pulse test
TEST CONDITIONS
IC =100µA, IE =0
IC =1mA, IB =0
IE =10µA, IC =0
VCB =400V, IE =0
VEB =4V, IC =0
VCE =10V, IC =1mA
VCE =10V, IC =10mA
VCE =10V, IC =50mA
VCE =10V, IC =100mA
IC =1mA, IB =0.1mA
IC =10mA, IB =1mA
IC =50mA, IB =5mA
IC =10mA, IB =1mA
VCB =20V, IE =0, f=1MHz
VEB =0.5V, IC =0, f=1MHz
SYMBOL
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE1*
hFE2*
hFE3*
hFE4*
VCE(sat)1*
VCE(sat)2*
VCE(sat)3*
VBE(sat)*
Cobo
Cibo
MIN.
500
400
6
-
-
40
50
45
40
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
-
-
-
0.1
0.1
-
200
-
-
0.4
0.5
0.75
0.75
7
130
UNIT
V
V
V
µA
µA
V
V
V
V
pF
pF
http://www.SeCoSGmbH.com/
21-Sep-2010 Rev. B
Any changes of specification will not be informed individually.
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