MMBTA43 Datasheet, PDF (1/1 Pages) Zowie Technology Corporation – HIGH VOLTAGE TRANSISTOR NPN SILICON

Elektronische Bauelemente
MMBTA43
0.5A , 200V
NPN Plastic Encapsulated Transistor
FEATURES
High Voltage Application
Telephone Application
Complementary to MMBTA93
MARKING
ABX
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
Leader Size
7 inch
1
Base
SOT-23
A
L
3
Top View C B
1
1
2
K
E
3
2
D
F
G
H
J
Collector
3
2
Emitter
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.80 3.04
2.10 2.55
1.20 1.40
0.89 1.15
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.09 0.18
0.45 0.60
0.08 0.177
0.6 REF.
0.89 1.02
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ, TSTG
200
200
5
500
350
357
150, -55~150
Unit
V
V
V
mA
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector to Base Breakdown Voltage
V(BR)CBO
200
-
-
V IC=100µA, IE=0
Collector to Emitter Breakdown Voltage V(BR)CEO
200
-
-
V IC=1mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
5
-
-
V IE=100µA, IC=0
hFE(1)1
40
-
-
VCE=10V, IC=10mA
DC Current Gain
hFE(2)1
40
-
-
VCE=10V, IC=1mA
hFE(3)1
40
-
-
VCE=10V, IC=30mA
Collector to Emitter Saturation Voltage VCE(sat)1
-
-
0.5
V IC=20mA, IB=2mA
Base to Emitter Saturation Voltage
VBE(sat)1
-
-
0.9
V IC=20mA, IB=2mA
Transition Frequency
fT
50
-
-
MHz VCE=20V, IE=10mA, f=100MHz
Collector output capacitance
Cob
-
-
4
pF VCB=20V, IE=0, f=1MHz
Note:
1. Pulse test: pulse width ≦ 300µs, duty cycle ≦ 2.0%.
http://www.SeCoSGmbH.com/
15-Jul-2011 Rev. A
Any changes of specification will not be informed individually.
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