MMBTA42_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

Elektronische Bauelemente
MMBTA42
0.3A , 300V
NPN Plastic Encapsulated Transistor
FEATURES
 High Voltage Application
 Telephone Application
 Complementary to MMBTA92
MARKING
1D
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
Leader Size
7 inch
SOT-23
A
L
3
Top View C B
1
1
2
K
E
D
F
G
H
3
2
J
Collector


Base

Emitter
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.80 3.04
2.10 2.55
1.20 1.40
0.89 1.15
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.09 0.18
0.45 0.60
0.08 0.177
0.6 REF.
0.89 1.02
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Current-Peak
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction, Storage Temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CM
P_C
R_θJA
T_J, T_STG
Ratings
300
300
5
0.3
0.5
0.35
357
150, -55~150
Unit
V
V
V
A
A
W
°C / W
°C
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Min.
Max. Unit
Collector to Base Breakdown Voltage
V_(BR)CBO
300
Collector to Emitter Breakdown Voltage
V_(BR)CEO
300
-
V
-
V
Emitter to Base Breakdown Voltage
V_(BR)EBO
5
-
V
Collector cut-off current
Emitter cut-off current
I_CBO
-
0.25
μA
I_EBO
-
0.1
μA
60
-
DC Current Gain
h_FE
100
200
60
-
Collector to Emitter Saturation Voltage
V_CE(sat)
-
0.2
V
Base to Emitter Saturation Voltage
Transition Frequency
V_BE(sat)
-
0.9
V
f_T
50
-
MHz
Test Conditions
I_C=0.1mA, I_E=0
I_C=1mA, I_B=0
I_E=0.1mA, I_C=0
V_CB=200V, I_E=0
V_EB=5V, I_C=0
V_CE=10V, I_C=1mA
V_CE=10V, I_C=10mA
V_CE=10V, I_C=30mA
I_C=20mA, I_B=2mA
I_C=20mA, I_B=2mA
V_CE=20V, I_C=10mA, f=30MHz
http://www.SeCoSGmbH.com/
11-Sep-2013 Rev. C
Any changes of specification will not be informed individually.
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