MMBTA42W Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – General Purpose Transistor

Elektronische Bauelemente
MMBTA42W
NPN Silicon
General Purpose Transistor
FEATURES
· Plastic-Encapsulate Transistors
· Power dissipation & Collector current
Pcm: 0.2W Icm: 0.3A
· High voltage V(BR): 300V
2. Base
3. Collector
1.Emitter
RoHS Compliant Product
A
L
Top View
BS
V
G
C
D
H
K
SOT-323
Dim Min Max
A 1.800 2.200
B 1.150 1.350
C 0.800 1.000
D 0.300 0.400
G 1.200 1.400
H 0.000 0.100
J 0.100 0.250
K 0.350 0.500
J
L 0.590 0.720
S 2.000 2.400
V 0.280 0.420
All Dimension in mm
č ¥ Ď ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO Ic= 100 ȰAđ IE=0
300
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
V(BR)CEO Ic= 1 m Ađ IB=0
300
V(BR)EBO IE= 100ȰAđ IC=0
5
Collector cut-off current
ICBO
VCB=200 V , IE=0
Emitter cut-off current
IEBO
VEB= 5V , IC=0
HFEč1Ď V_CE= 10V, I_C= 1mA
60
DC current gain
HFEč2Ď V_CE= 10V, I_C=10mA
100
HFEč3Ď V_CE=10V, I_C=30mA
70
Collector-emitter saturation voltage
VCE(sat) IC=20 mA, IB= 2m A
Base-emitter saturation voltage
Transition frequency
VBE(sat) IC= 20 m A, IB=2m A
VCE= 20V, IC= 10mA
fT
50
f=30MHz
MAX UNIT
V
V
V
0.25 È°A
0.1 È°A
200
0.2
V
0.9
V
MHz
DEVICE MARKING
MMBTA42W=K3M
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual