MMBTA42 Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN high-voltage transistor

Elektronische Bauelemente
MMBTA42
NPN Silicon
General Purpose Transistor
FEATURES
· Plastic-Encapsulate Transistors
· Power dissipation & Collector current
Pcm: 0.3W Icm: 0.3A
· High voltage V(BR): 300V
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
A
L
3
Top View
1
2
BS
V
G
C
D
H
K
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
J
All Dimension in mm
č ¥ Ď ELECTRICAL CHARACTERISTICS Tamb=25
unless otherwise specified
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO Ic= 100 ȰAđ IE=0
300
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
V(BR)CEO Ic= 1 m Ađ IB=0
300
V(BR)EBO IE= 100ȰAđ IC=0
5
Collector cut-off current
ICBO
VCB=200 V , IE=0
Emitter cut-off current
IEBO
VEB= 5V , IC=0
HFEč1Ď V_CE= 10V, I_C= 1mA
60
DC current gain
HFEč2Ď V_CE= 10V, I_C=10mA
100
HFEč3Ď V_CE=10V, I_C=30mA
60
Collector-emitter saturation voltage
VCE(sat) IC=20 mA, IB= 2m A
Base-emitter saturation voltage
Transition frequency
VBE(sat) IC= 20 m A, IB=2m A
VCE= 20V, IC= 10mA
fT
50
f=30MHz
MAX UNIT
V
V
V
0.25 È°A
0.1 È°A
200
0.2
V
0.9
V
MHz
DEVICE MARKING
MMBTA42=1D
http://www.SeCoSGmbH.com
01-June-2004 Rev. B
Any changing of specification will not be informed individual
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