MMBTA13 Datasheet, PDF (1/3 Pages) Transys Electronics – NPN SURFACE MOUNT DARLINGTON TRANSISTOR

Elektronische Bauelemente
MMBTA13
MMBTA14
Darlington Amplifier Transistor NPN Silicon
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
3
1
2
COLLECTOR 3
BASE 1
EMITTER 2
A
L
3
BS
1
2
V
G
FEATURES
C
Power dissipation
D
P_CM : 0.3W Tamb=25
Collector current
I_CM : 0.3A
Collector-base voltage
V_(BR)CBO : 30V
Operating and storage junction temperature range
T_J T_stg: -55 to +150
H
K
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
J
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
ELECTRICAL CHARACTERISTICS Tamb=25
Parameter
Symbol
unless otherwise specified
Test conditions
MIN
Collector-base breakdown voltage
V_(BR)CBO Ic= 100μA， I_E=0
30
Collector-emitter breakdown voltage
V_(BR)CEO Ic= 100uA， I_B=0
30
Collector-emitter breakdown voltage
V_(BR)EBO I_E= 100μA， I_c=0
10
MAX
Collector cut-off current
I_CBO
V_CB=30 V , I_E=0
0.1
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
I_EBO
V_EB= 10V , I_C=0
0.1
h_FE(1) *
V_CE=5V, I_C= 10mA
h_FE(2) *
V_CE=5V, I_C= 100mA
MMBTA13
MMBTA14
MMBTA13
MMBTA14
5000
10000
10000
20000
V_{CE (sat)} * I_C=100 mA, I_B=0.1mA
1.5
UNIT
V
V
V
μA
μA
V
Base-emitter voltage
V_BE *
V_CE=5V,I_C= 100mA
2.0
V
Transition frequency
f_T
V_CE=5V, I_C= 10mA
f=100MHz
125
MHz
* Pulse Test : pulse width≤300μs，duty cycle≤2%。
Marking : MMBTA13:K2D；MMBTA14：K3D
http://www.SeCoSGmbH.com
01-Jun-2004 Rev. B
Any changing of specification will not be informed individual
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