MMBTA06_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

Elektronische Bauelemente
MMBTA06
0.5A , 80V
NPN Plastic Encapsulated Transistor
FEATURES
 High Voltage Application
 Telephone Application
 Complementary to MMBTA56
MARKING
1GM
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
Leader Size
7 inch
SOT-23
A
L
3
Top View C B
1
1
2
K
E
D
F
G
H
3
2
J
Collector


Base

Emitter
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.80 3.04
2.10 2.55
1.20 1.40
0.89 1.15
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.09 0.18
0.45 0.60
0.08 0.177
0.6 REF.
0.89 1.02
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction, Storage Temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_J, T_STG
Ratings
80
80
4
500
300
416
150, -55~150
Unit
V
V
V
mA
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Transition Frequency
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_CES
I_EBO
h_FE(1)
h_FE(2)
V_CE(sat)
V_BE(sat)
f_T
Min.
80
80
4
-
-
-
100
100
-
-
100
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
0.1
0.1
0.1
400
-
0.25
1.2
-
Unit
V
V
V
μA
μA
μA
V
V
MHz
Test Conditions
I_C=0.1mA, I_E=0
I_C=1mA, I_B=0
I_E=0.1mA, I_C=0
V_CB=80V, I_E=0
V_CE=60V, I_B=0
V_EB=3V, I_C=0
V_CE=1V, I_C=10mA
V_CE=1V, I_C=100mA
I_C=100mA, I_B=10mA
I_C=100mA, I_B=10mA
V_CE=2V, I_C=10mA, f=100MHz
http://www.SeCoSGmbH.com/
03-May-2012 Rev. C
Any changes of specification will not be informed individually.
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