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MMBTA06 Datasheet, PDF (1/2 Pages) Samsung semiconductor – NPN (DRIVER TRANSISTOR)
Elektronische Bauelemente
MMBTA06
Plastic-Encapsulate Transistor
Features
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
• NPN Silicon Epitaxial Planar Transistor for
switching and amplifier applications.
• As complementary type, the PNP tranistor MMBTA56 is
recommended.
• This transistor is also available in the TO-92 case with the
type designation MPSA06.
A
L
Mechanical Data
Case: SOT-23 Plastic Package
Weight: approx. 0.008g
3
Top View
1
2
Marking Code: 1GM
V
G
3.Collector
1. Base
2. Emitter
BS
C
D
H
K
J
SOT-23
Dim
Min
Max
A
2.800 3.040
B
1.200 1.400
C
0.890 1.110
D
0.370 0.500
G
1.780 2.040
H
0.013 0.100
J
0.085 0.177
K
0.450 0.600
L
0.890 1.020
S
2.100 2.500
V
0.450 0.600
All Dimension in mm
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
Parameter
Symbol
Value
Collector Base Voltage
VCBO
80
Collector-Emitter Voltage
VCEO
80
Emitter-Base Voltage
VEBO
4.0
Collector Current
Power Dissipation at TA = 25°C
IC
500
277(1)
Ptot
300(2)
Thermal Resistance Junction to Ambiant Air
RθJA
450 (1)
Junction Temperature
Tj
150
Storage Temperature Range
TS
–65 to +150
Unit
V
V
V
mA
mW
°C/W
°C
°C
Notes: Device on alumina substrate.
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage
V(BR)CBO
IC = 100µA, IE = 0
80
—
—
V
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC = 1mA, IB = 0
80
—
—
V
Emitter-Base Breakdown Voltage
V(BR)EBO
IE = 100µA, IC = 0
4.0
—
—
V
Collector-Emitter Cutoff Current
ICES
VCE = 60V, IB = 0
—
—
100
nA
Collector-Base Cutoff Current
ICBO
VCB = 80V, IE = 0
—
—
100
nA
Collector Saturation Voltage
VCEsat IC = 100mA, IB = 10mA
—
—
0.25
V
Base-Emitter On Voltage
VBE(on) IC = 100mA, VCE = 1V
—
—
1.2
V
DC Current Gain
hFE
VCE = 1V, IC = 10mA
VCE = 1V, IC = 100mA
100
100
—
—
—
—
—
—
Gain-Bandwidth Product
fT
VCE = 2V, IC = 10mA
f = 100MHz
100
—
—
MHz
http://www.SeCoSGmbH.com
01-Jun-2004 Rev. B
Any changing of specification will not be informed individual
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