MMBTA05_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

Elektronische Bauelemente
MMBTA05
NPN Silicon
Epitaxial Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
 The MMBTA05 is Amplifier Transistor
FEATURES
 Driver Transistor
MARKING
C
1H
B
E
Collector


Base

Emitter
SOT-23
A
L
3
Top View
CB
1
1
2
K
E
D
F
G
H
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.04
2.10 2.80
1.20 1.60
0.89 1.40
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
-
0.18
0.40 0.60
0.08 0.20
0.6 REF.
0.85 1.15
MAXIMUM RATINGS (at Ta = 25°C unless otherwise specified)
PARAMETER
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissapation
Junction, Storage Temperature
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J, T_STG
RATINGS
60
60
4
0.5
300
150, -55~150
UNIT
V
V
V
A
mW
℃
ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Collector Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
TEST CONDITIONS
I_C =100µA, I_E =0
I_C =1mA, I_B =0
I_E =100µA, I_C =0
V_CB =60V, I_E =0
V_CE =60V, I_B =0
V_EB =3V, I_C =0
V_CE =1V, I_C =10mA
V_CE =1V, I_C =100mA
I_C =100mA, I_B =10mA
V_CE =1V, I_C=100mA
V_CE =2V, I_C=10mA,f=100MHz
SYMBOL
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_CEO
I_EBO
h_FE1
h_FE2
V_CE(sat)
V_BE
F_T
MIN.
60
60
4
100
100
100
MAX.
0.1
0.1
0.1
400
UNIT
V
V
V
µA
µA
µA
0.25
V
1.2
V
MHz
http://www.SeCoSGmbH.com/
26-Oct-2009 Rev. C
Any changes of specification will not be informed individually.
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