MMBT619_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – NPN Plastic Encapsulated Transistor

Elektronische Bauelemente
MMBT619
2A , 50V
NPN Plastic Encapsulated Transistor
FEATURES
Low saturation voltage
MARKING
619
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
Leader Size
7 inch
SOT-23
A
L
3
Top View C B
1
1
2
K
E
3
2
D
F
G
H
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.80 3.04
2.10 2.55
1.20 1.40
0.89 1.15
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.09 0.18
0.45 0.60
0.08 0.177
0.6 REF.
0.89 1.02
Collector
3
1
Base
2
Emitter
ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
50
V
Collector to Emitter Voltage
VCEO
50
V
Emitter to Base Voltage
VEBO
5
V
Collector Current - Continuous
IC
2
A
Collector Power Dissipation
PC
350
mW
Thermal Resistance From Junction To Ambient
RθJA
Maximum Power Dissipation ¹
PCM
Thermal Resistance From Junction To Ambient ¹
RθJA
357
°C / W
625
mW
200
°C / W
Junction, Storage Temperature
TJ, TSTG
150, -55~150
°C
Note:
1. Maximum power dissipation is calculated assuming that the device is mounted on a ceramic substrate measuring 15x15x0.6mm.
http://www.SeCoSGmbH.com/
20-Feb-2012 Rev. A
Any changes of specification will not be informed individually.
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