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MMBT593 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – General Purpose Transistor
Elektronische Bauelemente
MMBT593
PNP Silicon
General Purpose Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Medium Power Transistor
Collector
3
MARKING
593
1
Base
2
Emitter
ABSOLUTE MAXIMUM RATINGS
Parameter
Collector to Emitter Voltage
Collector to Base Voltage
Emitter to Base Voltage
Collector Current - Continuous
Total Device Dissipation
Junction and Storage Temperature
Symbol
VCEO
VCBO
VEBO
IC
PD
TJ, TSTG
Ratings
-100
-120
-5
-1
250
150,
Unit
V
V
V
A
mW
°C
SOT-23
A
L
3
Top View
CB
1
1
2
K
E
3
2
D
F
G
H
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.80 3.00
2.25 2.55
1.20 1.40
0.90 1.15
1.80 2.00
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.10 REF.
0.55 REF.
0.08 0.15
0.5 REF.
0.95 TYP.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Parameter
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Base–Emitter Voltage
Transition Frequency
Collector Output Capacitance
Symbol
BVCEO
BVCBO
BVEBO
ICBO
ICES
IEBO
hFE(1)*
hFE(2)*
hFE(3)*
hFE(4)*
VCE(sat)*
VCE(sat)*
VBE(sat)*
VBE(on)*
fT
COB
Min.
-100
-120
-5
-
100
100
100
50
-
-
-
150
-
Typ.
-
-
-
-
-
-
-
-
-
-
Max. Unit
Test Conditions
-
V
IC = -10mA, IB = 0
-
V
IC = -100μA, IE = 0
-
V
IE = -100μA, IC = 0
-0.1
μA
VCB = -100V, IE = 0
-0.1
μA
VCE = -100V, IE = 0
-0.1
μA
VEB = -4V, IC = 0
-
IC = - 1mA, VCE = - 5.0V
-
300
-
IC = - 250mA, VCE = - 5.0V
IC = - 0.5A, VCE = - 5.0V
-
IC = - 1 A, VCE = - 5.0V
-0.2
-0.3
V
IC = - 250mA, IB = - 25mA
IC = - 500mA, IB = - 50mA
-1.1
V
IC = - 500mA, IB = - 50mA
-1.0
V
VCE = -5V, IC = 1mA
-
MHz VCE=-10V, IC=- 50mA, f=100MHz
5.0
pF
VCB = -10V, IE = 0, f = 1.0MHz
*Pulse test: Pulse width ≦ 300μs, duty cycle ≦ 2%
01-June-2002 Rev. A
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