MMBT591 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – General Purpose Transistor

Elektronische Bauelemente
MMBT591
PNP Silicon
General Purpose Transistor
FEATURES
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
3
Power dissipation
PCM : 0.5 W
Collector Current
ICM : -1 A
Collector-base voltage
V(BR)CBO : -80 V
Operating & storage junction temperature
Tj, Tstg : - 55^OC ~ + 150^O C
V
1
2
A
L
3
Top View
1
2
G
1
BASE
BS
COLLECTOR
3
2
EMITTER
Marking: 591
C
D
H
K
J
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter
Symbol
Test conditions
MIN TYP
Collector-base breakdown voltage
V_(BR)CBO Ic=-100μA,I_E=0
-80
Collector-emitter breakdown voltage V_(BR)CEO¹ Ic=-10mA,I_B=0
-60
Emitter-base breakdown voltage
V_(BR)EBO I_E=-100μA,I_C=0
-5
Collector cut-off current
I_CBO
V_CB=-60V,I_E=0
Emitter cut-off current
I_EBO
V_EB=-4V,I_C=0
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
h_FE(1)
h_FE(2) ¹
h_FE(3) ¹
h_FE(4) ¹
V_CE(sat)1 ¹
V_CE(sat)2 ¹
V_BE(sat) ¹
V_BE¹
V_CE=-5V,I_C=-1mA
V_CE=-5V,I_C=-500mA
V_CE=-5V,I_C=-1A
V_CE=-5V,I_C=-2A
I_C=-500mA,I_B=-50mA
I_C=-1A,I_B=-100mA
I_C=-1A,I_B=-100mA
V_CE=-5V,I_C=-1A
100
100
80
15
Transition frequency
f_T
V_CE=-10V,I_C=-50mA,,f=100MHz
150
Collector output capacitance
C_ob
V_CB=-10V,f=1MHz
1_{Measured under pulsed conditions,Pulse width=300μs, Duty cycle≤2%.}
MAX
-0.1
-0.1
300
-0.3
-0.6
-1.2
-1
10
UNIT
V
V
V
μA
μA
V
V
V
V
MHz
pF
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Any changing of specification will not be informed individual