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| MMBT589_15 Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – PNP Plastic Encapsulated Transistor | |||
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Elektronische Bauelemente
MMBT589
-1A , -50V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of â-Câ specifies halogen & lead-free
FEATURES
ï¬ High current surface mount PNP silicon switching transistor
for Load management in portable applications
MARKING
589
SOT-23
A
L
3
Top View
CB
1
1
2
K
E
3
2
PACKAGE INFORMATION
D
F
G
H
J
Package
SOT-23
MPQ
3K
Leader Size
7â inch
ï ï ïªï
Base
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction
To Ambient
Junction, Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ, TSTG
Collector
ï¬ï
ï«
Emitter
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.04
2.10 2.80
1.20 1.60
0.89 1.40
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
-
0.18
0.40 0.60
0.08 0.20
0.6 REF.
0.85 1.15
Ratings
-50
-30
-5
-1
310
403
150, -55~150
Unit
V
V
V
A
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector-emitter cut-off current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition frequency
Collector Output Capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICES
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Cob
Min.
-50
-30
-5
-
-
-
100
100
80
40
-
-
-
-
100
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-0.1
-0.1
-0.1
-
300
-
-
-0.25
-0.3
-0.65
-1.2
-
15
Unit
V
V
V
µA
µA
µA
V
V
MHz
pF
Test Conditions
IC= -100µA, IE=0
IC= -10mA, IB=0
IE= -100µA, IC=0
VCB= -30V, IE=0
VCES= -30V
VEB= -4V, IC=0
VCE= -2V, IC= -1mA
VCE= -2V, IC= -500mA
VCE= -2V, IC= -1A
VCE= -2V, IC= -2A
IC= -500mA, IB = -50mA
IC= -1A, IB = -100mA
IC= -2A, IB = -200mA
IC= -1A, IB = -100mA
VCE= -5V,IC= -100mA, f=100MHz
f=1MHz
http://www.SeCoSGmbH.com/
18-Oct-2013 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 3
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