MMBT5551W Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – Plastic-Encapsulate Transistor

Elektronische Bauelemente
MMBT5551W
NPN Silicon
Plastic-Encapsulate Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-323
FEATURE
Ideal for Medium Power Amplification and Switching
Also Available in Lead Free Version
Complementary to MMBT5401W
MARKING: K4N
1
Base
Collector
3
2
Emitter
A
L
3
Top View
CB
1
2
K
E
3
1
2
D
F
G
H
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
1.80 2.20
1.80 2.45
1.15 1.35
0.80 1.10
1.20 1.40
0.20 0.40
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.100 REF.
0.525 REF.
0.08 0.25
-
-
0.650 TYP.
MAXIMUM RATINGS (T_A = 25°C unless otherwise specified)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current-Continuous
Collector Power Dissipation
Thermal Resistance, Junction to Ambient
Opterating & Storage Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ, TSTG
RATINGS
180
160
6
200
200
625
150, -55 ~ 150
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise specified)
CHARACTERISTIC
SYMBOL MIN
MAX
UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE1
hFE2
hFE3
VCE(sat)
VCE(sat)
VBE(sat)
VBE(sat)
fT
Cob
180
160
6
80
80
30
100
V
V
V
50
nA
50
nA
250
0.15
V
0.2
V
1
V
1
V
300
MHz
6
pF
Noise Figure
NF
8
dB
UNIT
V
V
V
mA
mW
°C/W
°C
TEST CONDITION
IC=100µA, IE=0
IC = 1mA, IB = 0
IE=10µA, IC=0
VCB=120V, IE=0
VEB=4V, IC=0
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE=5V, IC=50mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=10V, IC=10mA, f=100MHz
VCB=10V, IE=0, f=1MHz
VCE=5V, IC=0.2mA, f=1KHz,
RS=1KΩ
01-Dec-2009 Rev. A
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