MMBT5551 Datasheet, PDF (1/3 Pages) Transys Electronics – NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Elektronische Bauelemente
MMBT5551
NPN Silicon
General Purpose Transistor
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
A
L
FEATURES
3
Top View
1
2
BS
Power dissipation
V
G
P_CM:
Collector current
I_CM:
0.3 W (Tamb=25^oC)
D
0.6 A
Collector-base voltage
V(BR)CBO: 180 V
Operating and storage junction temperature range
T_J, T_stg: -55 to +150^oC
C
H
K
J
COLLECTOR
BASE
EMITTER
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
ELECTRICAL CHARACTERISTICS (Tamb=25^oC unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
Test conditions
Ic= 100µA, IE=0
Ic= 0.1mA, IB=0
IE= 100µA, IC=0
VCB=180V, IE=0
VEB= 4V, IC=0
VCE= 5V, IC= 1mA
VCE= 5V, IC=10mA
VCE= 5V, IC=50mA
MIN MAX UNIT
180
V
160
V
6
V
0.1
µA
0.1
µA
80
80
250
30
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
VCE(sat)
IC=50 mA, IB= 5mA
0.5
V
VBE(sat)
IC= 50 mA, IB= 5mA
1
V
fT
VCE=10V, IC= 10mA, f=100MHz
80
MHz
DEVICE MARKING
MMBT5551= G1
http://www.SeCoSGmbH.com
01-Jun-2004 Rev. B
Any changing of specification will not be informed individual
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