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MMBT493 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – General Purpose Transistor
Elektronische Bauelemente
MMBT493
NPN Silicon
General Purpose Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Medium Power Transistor
MARKING
Collector
3
SOT-23
A
L
3
Top View
CB
1
1
2
K
E
3
2
493
1
Base
2
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
F
REF.
A
B
C
D
E
F
D
G
Millimeter
Min. Max.
2.80 3.00
2.25 2.55
1.20 1.40
0.90 1.15
1.80 2.00
0.30 0.50
H
REF.
G
H
J
K
L
J
Millimeter
Min. Max.
0.10 REF.
0.55 REF.
0.08 0.15
0.5 REF.
0.95 TYP.
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction & Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ, TSTG
Ratings
120
100
5
1
250
150, -55~150
Unit
V
V
V
A
mW
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Parameter
Collector-base Breakdown Voltage
Collector-emitter Breakdown Voltage
Emitter-base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-emitter Saturation Voltage
Base-emitter Saturation Voltage
Transition Frequency
Output Capacitance
Symbol
V(BR)CBO
V*
(BR)CEO
V(BR)EBO
ICBO
ICES
IEBO
hFE(1)*
hFE(2) *
hFE(3) *
hFE(4) *
V*
CE(sat)
V*
CE(sat)
V*
BE(sat)
VBE(on)*
fT
COB
Min.
120
100
5
-
-
-
100
100
60
20
-
-
-
-
150
-
Max.
-
-
-
0.1
0.1
0.1
-
300
-
-
0.3
0.6
1.15
1
-
10
Unit
V
V
V
μA
μA
μA
V
V
V
V
MHz
pF
Test Conditions
IC=100μA, IE=0
IC=10mA, IB=0
IE=100μA, IC=0
VCB=100V, IE=0
VCE=100V, IE=0
VEB=4V, IC=0
VCE=10V, IC=1mA
VCE=10V, IC=250mA
VCE=10V, IC=500mA
VCE=10V, IC=1000mA
IC=500mA, IB=50mA
IC=1000mA, IB=100mA
IC=1000mA, IB=100mA
VCE=10V, IC=1000mA
VCE = 10V, IC = 50mA, f = 100MHz
VCB = 10V, f = 1.0MHz, IE = 0
*Pulse test: Pulse width ≦ 300μs, duty cycle ≦ 2%
http://www.SeCoSGmbH.com/
01-June-2002 Rev. A
Any changes of specification will not be informed individually.
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