MMBT491 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – General Purpose Transistor

Elektronische Bauelemente
MMBT491
NPN Silicon
General Purpose Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low equivalent on-resistance
MARKING: 491
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction & Storage temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J, T_STG
1
Base
3 ^Collector
2
Emitter
A
L
K
3
Top View
BS
1
2
V
G
D
Ratings
80
60
5
1
500
150, -55~150
J
C
H
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
Unit
V
V
V
A
mW
°C
ELECTRICAL CHARACTERISTICS at Ta = 25°C
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output Capacitance
Symbol
V_(BR)CBO
V¹
(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE(1)
h_FE(2)1
h_FE(3)1
h_FE(4)1
V¹
CE(sat)1
V1
CE(sat)2
V1
BE(sat)
V_BE1
f_T
C_OB
Min.
80
60
5
-
-
100
100
80
30
-
-
-
-
150
-
Note: 1. Measured under pulsed conditions, Pulse width = 300 μs, Duty cycle ≤ 2%.
Max.
-
-
-
0.1
0.1
-
300
-
-
0.25
0.5
1.1
1
10
Unit
V
V
V
μA
μA
V
V
V
V
MHz
pF
Test Conditions
I_C=100μA,I_E=0
I_C=10mA,I_B=0
I_E=100μA,I_C=0
V_CB=60V, I_E=0
V_EB=4V, I_C=0
V_CE=5V,I_C=1mA
V_CE=5V,I_C=500mA
V_CE=5V,I_C=1A
V_CE=5V,I_C=2A
I_C=500mA, I_B=50mA
I_C=1A, I_B=100mA
I_C=1A, I_B=100mA
I_C=1A, V_CE=5V
V_CE = 10V, I_C = 50mA, f = 100MHz
V_CB = 10V, f = 1.0MHz, I_E = 0
http://www.SeCoSGmbH.com/
01-June-2002 Rev. A
Any changes of specification will not be informed individually.
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