MMBT4403 Datasheet, PDF (1/4 Pages) Transys Electronics – PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

MMBT4403
Elektronische Bauelemente
PNP Silicon
Switching Transistor
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
A
L
3
Top View
1
2
BS
V
G
C
D
H
K
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
J
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
MAXIMUM RATINGS* T_A=25℃ unless otherwise noted
Symbol
Parameter
V_CBO
Collector-Base Voltage
V_CEO
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current -Continuous
P_C
Collector Dissipation
T_J, T_stg
Junction and Storage Temperature
Value
-40
-40
-5
-0.6
0.3
-55-150
Units
V
V
V
A
W
℃
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter
Symbol Test conditions
MIN
Collector-base breakdown voltage
V_(BR)CBO Ic=-100μA , I_E=0
-40
Collector-emitter breakdown voltage
V_(BR)CEO I_C= -1mA , I_B=0
-40
Emitter-base breakdown voltage
V_(BR)EBO I_E=-100μA, I_C=0
-5
Collector cut-off current
I_CBO
V_CB=-35V , I_E=0
Collector cut-off current
I_CEO
V_CE=-35 V , I_B=0
Emitter cut-off current
I_EBO
V_EB=-4V , I_C=0
MAX UNIT
V
V
V
-0.1 μA
-0.1 μA
-0.1 μA
DC current gain
h_FE
V_CE=-2 V, I_C= -150mA 100
300
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
MARKING: 2T
http://www.SeCoSGmbH.com
01-Jun-2004 Rev. B
V_CE(sat)
V_BE(sat)
f_T
I_C=-150 mA, I_B=-15mA
-0.4
V
I_C=- 150 mA, I_B=-15mA
-0.95 V
V_CE= -10V, I_C= -20mA
200
f = 100MHz
MHz
Any changing of specification will not be informed individual
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