MMBT4401_15 Datasheet, PDF (1/5 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

Elektronische Bauelemente
MMBT4401
NPN Silicon
Switching Transistor
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
COLLECTOR
3
1
BASE
2
EMITTER
A
L
3
Top View
1
2
BS
3
1
2
V
G
C
D
H
K
J
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
THE RMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
T hermal R es is tance, J unction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBT4401 = 2X
Symbol
V_CEO
V_CBO
V_EBO
I_C
Symbol
PD
Rθ_JA
PD
Rθ_JA
T _J , Ts _tg
Value
40
60
6.0
600
Max
300
1.8
556
300
2.4
417
-55 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(3)
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
Base Cutoff Current
(VCE = 35 Vdc, VEB = 0.4 Vdc)
Collector Cutoff Current
(VCE = 35 Vdc, VEB = 0.4 Vdc)
1. FR±5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width =< 300 µs, Duty Cycle =< 2.0%.
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/ ^oC
o_C/W
mW
mW/ ^oC
o_C/W
o_C
Symbol
V_(BR)CEO
V_{(B R)CBO}
V_(BR)EBO
I_BEV
I_CEX
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
Min
Max
Unit
Vdc
40
—
Vdc
60
—
Vdc
6.0
—
µAdc
—
0.1
µAdc
—
0.1
http://www.SeCoSGmbH.com
01-Jun-2004 Rev. B
Any changing of specification will not be informed individual
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