MMBT3906FW_15 Datasheet, PDF (1/5 Pages) SeCoS Halbleitertechnologie GmbH – General Purpose Transistor

Elektronische Bauelemente
MMBT3906FW
PNP Silicon
General Purpose Transistor
FEATURES
· Epitaxial Planar Die Construction
· Complementary NPN Type Available
(MMBT3904FW)
· Ideal for Medium Power Amplification and
Switching
RoHS Compliant Product
A
L
Top View
BS
COLLECTOR
3
3
V
1
BASE
1
2
D
SOT-523
2
EMITTER
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 4 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBT3906FW = 3N, 2A
Symbol
VCEO
VCBO
VEBO
IC
Symbol
PD
R_qJA
PD
R_qJA
TJ, Tstg
G
C
H
K
Value
–40
–40
–5.0
–200
Unit
Vdc
Vdc
Vdc
mAdc
Max
200
1.6
600
300
2.4
400
– 55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
SOT-523
Dim Min Max
A 1.500 1.700
B 0.750 0.850
C 0.700 0.900
D 0.250 0.350
G 0.900 1.100
H 0.000 0.100
J 0.100 0.200
K 0.220 0.500
J
L 0.400 0.600
S 1.500 1.700
V 0.200 0.400
All Dimension in mm
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(3)
(IC = –1.0 mAdc, IB = 0)
V(BR)CEO
Vdc
–40
—
Collector – Base Breakdown Voltage
(IC = –10 mAdc, IE = 0)
V(BR)CBO
Vdc
–40
—
Emitter – Base Breakdown Voltage
(IE = –10 mAdc, IC = 0)
V(BR)EBO
Vdc
–5.0
—
Base Cutoff Current
(VCE = –30 Vdc, VEB = –3.0 Vdc)
IBL
nAdc
—
–50
Collector Cutoff Current
(VCE = –30 Vdc, VEB = –3.0 Vdc)
 ^{1. FR– 4 = Minimum Pad}
2. Alumina = 1.0 1.0 inchs. 99.5% alumina.
ICEX
nAdc
—
–50
REM : Thermal Clad is a trademark of the Bergquist Company.
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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