MMBT3904FW Datasheet, PDF (1/6 Pages) SeCoS Halbleitertechnologie GmbH – General Purpose Transistor

Elektronische Bauelemente
MMBT3904FW
NPN Silicon
General Purpose Transistor
FEATURES
· Epitaxial Planar Die Construction
· Complementary PNP Type Available
(MMBT3906FW)
· Ideal for Medium Power Amplification and
Switching
COLLECTOR
3
3
RoHS Compliant Product
A
L
Top View
BS
V
G
1
BASE
1
2
D
SOT-523
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient⁽¹⁾
Total Device Dissipation⁽²⁾
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient⁽²⁾
Junction and Storage Temperature
DEVICE MARKING
Symbol
PD
R_qJA
PD
R_qJA
TJ, Tstg
MMBT3904FW = 1N, AM
C
H
K
Value
40
60
6.0
200
Unit
Vdc
Vdc
Vdc
mAdc
Max
200
1.6
600
300
2.4
400
– 55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
SOT-523
Dim Min Max
A 1.500 1.700
B 0.750 0.850
C 0.700 0.900
D 0.250 0.350
G 0.900 1.100
H 0.000 0.100
J 0.100 0.200
K 0.220 0.500
J
L 0.400 0.600
S 1.500 1.700
V 0.200 0.400
All Dimension in mm
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (3)
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Base Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
Collector Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
 ^{1. FR– 4 = Minimum Pad}
2. Alumina = 1.0 1.0 Inch Pad.
Symbol
Min
V(BR)CEO
40
V(BR)CBO
60
V(BR)EBO
6.0
IBL
—
ICEX
—
Max
Unit
—
Vdc
—
Vdc
—
Vdc
50
nAdc
50
nAdc
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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