MMBT2907Q Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – General Purpose Transistor

Elektronische Bauelemente
* Features
MMBT2907Q
PNP Silicon
General Purpose Transistor
RoHS Compliant Product
D
SOT-89
D1
A
b1
Power dissipation
PCM : 1.25 W (Temp.= 25 ^OC)
Collector current
ICM : -0.6 A
Collector-base voltage
V(BR)CBO : -60 V
Operating & Storage junction Temperature
Tj, Tstg : -55^OC~ +150^OC
1
2
3
1.BAS E
2.COLLE CTOR
3.E MITTE R
b
e
e1
Symbol
A
b
b1
c
D
D1
E
E1
e
e1
L
Dimensions In Millimeters
Min
Max
1.400
1.600
0.320
0.520
0.360
0.560
0.350
0.440
4.400
4.600
1.400
1.800
2.300
2.600
3.940
4.250
1.500TYP
2.900
3.100
0.900
1.100
Electrical Characteristics( Tamb=25^OC unless otherwise specified)
C
Dimensions In Inches
Min
Max
0.055
0.063
0.013
0.020
0.014
0.022
0.014
0.017
0.173
0.181
0.055
0.071
0.091
0.102
0.155
0.167
0.060TYP
0.114
0.122
0.035
0.043
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output Capacitance
Input Capacitance
Delay time
Rise time
Storage time
Fall time
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE(1)
h_FE(2)
h_FE(3)
h_FE(4)
h_FE(5)
V_CE(sat)1
V_CE(sat)2
V_BE(sat)1
V_BE(sat)2
f_T
C_ob
C_ib
t_d
t_r
t_S
t_f
Test conditions
Ic= -10μA， I_E=0
Ic= -10mA， I_B=0
I_E=-10μA， I_C=0
V_CB=-50 V , I_E=0
V_EB= -3V , I_C=0
V_CE=-1V, I_C= -0.1mA
V_CE=-1V, I_C= -1mA
V_CE=-1V, I_C=-10mA
V_CE=-2V, I_C= -150mA
V_CE=-2V, I_C=-500mA
I_C=-150 mA, I_B=-15mA
I_C=-500 mA, I_B=- 50mA
I_C=-150 mA, I_B=-15mA
I_C=-500 mA, I_B= -50mA
V_CE=-20V, I_C= -50mA
f=100MHz
V_CB=-10V, I_E= 0
f=1MHz
V_EB=-2V, I_C= 0
f=1MHz
V_CC=-30V,
I_C=-150mA,I_B1=-15mA
I_C=-150mA
I_B1= I_B2= -15mA
MIN
-60
-60
-5
75
100
100
100
50
200
MAX
-0. 01
-0. 01
UNIT
V
V
V
μA
μA
300
-0.4
V
-1.6
V
-1.3
V
-2.6
V
MHz
8
pF
30
pF
12
nS
30
nS
300
nS
65
nS
Any changing of specification will not be informed individual
Page 1 of 3