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| MMBT2907FW Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – General Purpose Transistor | |||
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Elektronische Bauelemente
MMBT2907FW
PNP Silicon
General Purpose Transistor
RoHS Compliant Product
A suffix of â-Câ specifies halogen & lead-free
FEATURES
ï¬ Epitaxial Planar Die Construction
ï¬ Complementary NPN Type Available(MMBT2222FW)
ï¬ Ideal for Medium Power Amplification and Switching
MARKING CODE
ï¬ MMBT2907FW = 2F
ïªï
Base
Collector
ï¬ï
MAXIMUM RATINGS (at Ta = 25°C unless otherwise specified)
ï«ï
Emitter
SOT-523
A
L
3
Top View
CB
1
1
2
K
E
3
2
D
F
G
H
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
1.50 1.70
1.45 1.75
0.75 0.85
0.70 0.90
0.90 1.10
0.25 0.33
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.00 0.15
0.28 0.40
0.10 0.20
-
-
0.75 0.85
PARAMETER
SYMBOL
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current - Continuous
Total Device Dissapation FR-5 Board(1)
TA=25â
Thermal Resistance, Junction to Ambient
Junction & Storage Temperature
VCEO
VCBO
VEBO
IC
PD
RθJA
TJ, TSTG
ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified)
RATINGS
-60
-60
-5.0
-600
150
833
-55 ~ +150
UNIT
Vdc
Vdc
Vdc
mAdc
mW
â/W
â
PARAMETER
TEST CONDITIONS
Collector-Emitter Breakdown Voltage
OFF CHARACTERISTICS
IC = -10mAdc, IB = 0(2)
Collector-Base Breakdown Voltage
IC = -10 µAdc, IE = 0
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Curren-Gain-Bandwidth Product
Output capacitance
Turn-On Time
Delay Time
Rise Time
IE = -10 µAdc, IC = 0
VCB =-50 Vdc, IE = 0
VEB = -4 Vdc, IC = 0
ON CHARACTERISTICS
IC =-0.1mAdc, VCE = -10 Vdc
IC =-1.0mAdc, VCE = -10 Vdc
IC =-10mAdc, VCE = -10 Vdc
IC =-150mAdc, VCE = -10 Vdc
IC =-500mAdc, VCE = -10 Vdc
IC =-150mAdc, IB = -15 mAdc
IC =-500mAdc, IB = -50 mAdc
IC =-150mAdc, IB = -15 mAdc
IC =-500mAdc, IB = -50 mAdc
SMALL SIGNAL CHARACTERISTICS
VCE = -12Vdc, IC=-2.0mAdc,f=30MHz
VCB = -12 Vdc, IE = 0, f=1MHz
SWITCHING CHARACTERISTICS
VCC = -30 Vdc, IC = -150 mAdc,
IB1 = -15 mAdc
Turn-Out Time
Storage Time
Fall Time
VCC =-60 Vdc, IC = -150mAdc,
IB1= IB2 =-15 mAdc
Note:1.FR-5=1.0x0.75x0.062 in
2.Pulse Test: Pulse Width=300μ S, Duty Cycle⦠2.0%
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
FT
CoBO
Ton
Td
Tr
ToFF
TS
TF
MIN.
-60
-60
-5
-
-
75
100
100
100
50
-
140
MAX. UNIT
-
Vdc
-
Vdc
-
Vdc
-10
nAdc
-10
nAdc
300
-0.4
Vdc
-1.6
Vdc
-1.3
Vdc
-2.6
Vdc
MHz
5.0
pF
45
nS
10
nS
40
nS
100
nS
80
nS
30
nS
http://www.SeCoSGmbH.com/
20-Oct-2009 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 3
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