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MMBT2907AW_15 Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – General Purpose Transistor
Elektronische Bauelemente
MMBT2907AW
PNP Silicon
General Purpose Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-323
FEATURE
 Complementary NPN Type Available(MMBT2222AW)
 Epitaxial Planar Die Construction
 Ideal for Medium Power Amplification and Switching
A
L
3
Top View
CB
1
2
K
E
3
1
2
MARKING CODE
MMBT2907AW = K3F, 20
COLLECTOR
3
1
BASE
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
2
EMITTER
D
F
G
H
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
1.80 2.20
1.80 2.45
1.15 1.35
0.80 1.10
1.20 1.40
0.20 0.40
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.100 REF.
0.525 REF.
0.08 0.25
-
-
0.650 TYP.
PARAMETER
SYMBOL
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Currrent
Total Power Dissipation
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PD
TJ, TSTG
ELECTRICAL CHARACTERISTICS at Ta = 25°C
RATINGS
-60
-60
-5
-600
200
+150, -55 ~ +150
UNIT
V
V
V
mA
mW
℃
CHARACTERISTIC
TEST CONDITION SYMBOL MIN.
MAX. UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter=Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Output Capacitance
Input Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
IC=-10μA, IE=0
IC = -10 mA, IB = 0
BVCBO
-60
BVCEO
-60
IE=-10μA, IC=0
BVEBO
-5
VCB=-50V, IE=0
ICBO
VEB=-30V, IB=0
ICES
VEB=-3V, IC=0
IEBO
VCE=-10V, IC=-0.1mA
hFE1
75
VCE=-10V, IC=-1mA
hFE2
100
VCE=-10V, IC=-10mA
hFE3
100
VCE=-10V, IC=-150mA
hFE4
100
VCE=-10V, IC=-500mA
hFE5
50
IC=-150mA, IB=-15mA
VCE(sat)
IC=-500mA, IB=-50mA
VCE(sat)
IC=-150mA, IB=-15mA
VBE(sat)
-0.6
IC=-500mA, IB=-50mA
VBE(sat)
VCE=-20V, IC=-50mA, f=100MHz
fT
200
VCB=-10V, IE=0, f=0.1MHz
Cobo
VEB=-2V, IC=0, f=0.1MHz
Cib
Vcc=-30V, VBE(Off)=-1.5V
Td
IC=-150mA, IB1=-15mA
Tr
Vcc=-30V, IC=-150mA
TS
IB1=- IB2 =-15mA
TF
V
V
V
-100
nA
-100
nA
-100
nA
300
-0.4
V
-1.6
V
-1.3
V
-2.6
V
MHz
8
pF
30
pF
10
nS
40
nS
80
nS
30
nS
20-Oct-2009 Rev. C
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