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| MMBT2222Q Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – General Purpose Transistor | |||
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Elektronische Bauelemente
MMBT2222Q
NPN Silicon
General Purpose Transistor
SOT-89
RoHS Compliant Product
1.BASE
D
2.COLLECTOR
D1
3.EMITTER
FEATURES
Power dissipation
b1
PCM : 1 W Ta m b= 25
Collector current
ICM : 0.6 A
b
e
e1
Collector-base voltage
V (BR)CBO : 75 V
Operating and storage junction temperature range
T J T stg : -55 to +150
A
C
Symbol
A
b
b1
c
D
D1
E
E1
e
e1
L
Dimensions In Millimeters
Min
Max
1.400
1.600
0.320
0.520
0.360
0.560
0.350
0.440
4.400
4.600
1.400
1.800
2.300
2.600
3.940
4.250
1.500TYP
2.900
3.100
0.900
1.100
Dimensions In Inches
Min
Max
0.055
0.063
0.013
0.020
0.014
0.022
0.014
0.017
0.173
0.181
0.055
0.071
0.091
0.102
0.155
0.167
0.060TYP
0.114
0.122
0.035
0.043
ELECTRICAL CHARACTERISTICS ËTamb=25Ä unless otherwise specifiedË
Parameter
Symbol
Test conditions
MIN
MAX
Collector-base breakdown voltage
V(BR)CBO
Ic= 10ÂAË IE=0
75
Collector-emitter breakdown voltage
V(BR)CEO
Ic= 10mAË IB=0
40
Emitter-base breakdown voltage
V(BR)EBO
IE=10ÂAË IC=0
6
Collector cut-off current
ICBO
VCB=60V , IE=0
0. 01
Emitter cut-off current
IEBO
VEB= 3V , IC=0
0. 01
hFE(1)
VCE=10V, IC= 0.1mA
35
hFE(2)
VCE=10V, IC= 1mA
50
DC current gain
hFE(3)
VCE=10V, IC= 10mA
75
hFE(4)
VCE=10V, IC= 150mA
100
300
hFE(5)
VCE=1V, IC= 150mA
50
hFE(6)
VCE=10V, IC= 500mA
40
VCE(sat) IC=500 mA, IB= 50mA
1
Collector-emitter saturation voltage
VCE(sat) IC=150 mA, IB= 15mA
0.3
Base-emitter saturation voltage
VBE(sat) IC=500 mA, IB= 50mA
2.0
VBE(sat) IC=150 mA, IB=15mA
0.6
1.2
Transition frequency
VCE=20V, IC= 20mA
fT
f=100MHz
300
VCB=10V, IE= 0
Output Capacitance
Cob
f=1MHz
8
Delay time
Rise time
Storage time
Fall time
td
VCC=30V, IC=150mA
10
tr
VBE(off)=0.5V,IB1=15mA
25
tS
VCC=30V, IC=150mA
225
tf
IB1= IB2= 15mA
60
UNIT
V
V
V
ÂA
ÂA
V
V
V
V
MHz
pF
nS
nS
nS
nS
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 4
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