MMBD4448T Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – Plastic-Encapsulated Switching Diode

Elektronische Bauelemente
MMBD4448T Series
Plastic-Encapsulated Switching Diode
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
z Fast switching speed
z For general purpose switching applications
z High conductance
MARKING
Part
Name
Marking
MMBD4448T
A3
MMBD4448TA MMBD4448TC MMBD4448TS
A6
A7
A8
Circuit
SOT-523
A
L
3
Top View
CB
1
1
2
K
E
3
2
D
F
G
H
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
1.50 1.70
1.45 1.75
0.75 0.85
0.70 0.90
0.90 1.10
0.25 0.33
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.00 0.15
0.28 0.40
0.10 0.20
-
-
0.75 0.85
ABSOLUTE MAXIMUM RATINGS (Single Diode @ Ta = 25°C)
Parameter
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current
@ t = 1.0µs
@ t = 1.0s
Symbol
V_RM
V_RRM
V_RWM
V_R
V_R(RMS)
I_FM
I_O
I_FSM
Power Dissipation
P_D
Thermal Resistance Junction to Ambient
R_θJA
Storage Temperature
T_STG
Value
100
80
57
500
250
4.0
1.5
150
833
-65 ~ 150
Unit
V
V
V
mA
mA
A
mW
℃/W
℃
ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified)
Parameters
Reverse Breakdown Voltage
Forward Voltage (Note 2)
Peak Reverse Current (Note 2)
Total Capacitance
Reverse Recovery Time
Symbol
V_R
V_F1
V_F2
V_F3
V_F4
I_R
C_T
t_RR
Min.
80
0.62
-
-
-
-
-
-
-
Max.
-
0.720
0.855
1.00
1.25
0.10
25
3.50
4.00
Unit
V
V
V
V
V
µA
nA
pF
nS
Test Conditions
I_R = 2.5 µA
I_F = 5.0 mA
I_F = 10 mA
I_F = 100 mA
I_F = 150 mA
V_R = 70 V
V_R = 20 V
V_R = 6 V, f = 1.0 MHz
V_R = 6 V, I_F = 5.0 mA
01-Jun-2008 Rev. A
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