MMBD4448HAQW_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – Surface Mount Switching Diode Array

Elektronische Bauelemente
MMBD4448HAQW
ADW/CDW/SDW/TW
Surface Mount Switching Diode Array
FEATURES
· Fast Switching Speed
· Ultra-Small Surface Mount Package
· High Conductance Power dissipation
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
.055(1.40)
.047(1.20)
SOT-363
8^o
.026TYP
0^o
(0.65TYP)
.021REF
(0.525)REF
.096(2.45)
.085(2.15)
.053(1.35)
.045(1.15)
MECHANICAL DATA
· Case: SOT-363, Molded Plastic
· Terminals: Solderable per MIL-STD-202,
Method 208
· Polarity: See Diagrams Below
· Weight: 0.006 grams (approx.)
· Mounting Position: Any
4
5
6
O
3
2
1
.014(0.35)
.006(0.15)
.087(2.20)
.079(2.00)
.043(1.10)
.035(0.90)
.018(0.46)
.010(0.26)
.006(0.15)
.003(0.08)
.004(0.10)
.000(0.00)
.039(1.00)
.035(0.90)
Dimensions in inches and (millimeters)
6
5
4
6
5
4
6
5
4
6
5
4
6
5
4
1
2
3
1
2
3
1
2
3
1
2
3
1
2
3
MMBD4448HAQW
Marking: KA5
MMBD4448HADW
Marking: KA6
MMBD4448HCDW
Marking: KA7
MMBD4448HSDW
Marking: KAB
MMBD4448HTW
Marking: KAA
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
RMS Reverse Voltage
Average Rectified out Current(Note 1)
Forward Continuous Current (Note 1)
Thermal Resistance Junction to Ambient Air (Note1)
Storage Temperature Range
V_RM
V_RRM
V_R(RMS)
Io
I_FM
R _thJA
Tstg
100
80
57
250
500
625
– 55 to +150
V
V
V
mA
mA
°C/W
°C
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Reverse Breakdown Voltage (Note 2)
Forward Voltage (Note 2)
IF=5.0mA
V(BR)R
IF=10mA
VF
IF=100mA
IF=150mA
Reverse Current (Note 2)
VR=70V
VR=75V, Tj=150^OC
VR=25V, Tj=150^OC
IR
VR=20V
Total Capacitance VR=6V, f=1.0MHz
CT
Reverse Recovery Time IF=IR=10mA, Irr=0.1XIR,RL=100 Ohms
t _rr
Min
80
0.62
—
—
—
—
—
—
—
—
—
Max
Unit
Ð
V
0.72
0.855
1.0
V
1.25
100
nA
50
uA
30
uA
25
nA
3.5
pF
4.0
nS
Note 2. S hort duration tes t puls e us ed to minimize s elf-heating.
http://www.SeCoSGmbH.com
01-Jan-2006 Rev. B
Any changing of specification will not be informed individual
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