MMBD1501A Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – High conductance low leakage diode

Elektronische Bauelemente
MMBD1501A~ MMBD1505A
Plastic-Encapsulated Diode
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-23
FEATURES
 High conductance Low Leakage Diode
MARKING
Part
Name
Marking
MMBD1501A
A11
MMBD1503A
A13
MMBD1504A
A14
MMBD1505A
A15
Circuit
A
L
3
Top View
CB
1
1
2
K
E
D
F
G
H
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.04
2.10 2.80
1.20 1.60
0.89 1.40
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
-
0.18
0.40 0.60
0.08 0.20
0.6 REF.
0.85 1.15
ABSOLUTE MAXIMUM RATINGS (@ Ta = 25°C)
PARAMETER
Working Inverse Voltage
DC Forward Current
Average Rectifying Current
Total Device Dissipation
Thermal Resistance, Junction to Ambient
Surge Current
1s
1 microsecond
Junction, Storage Temperature
SYMBOL
V_R
I_F
I_O
P_D
R_θJA
I_SURGE
T_J , T_STG
LIMITS
200
600
200
350
357
1
2
150, -55~150
UNIT
V
mA
mA
mW
°C/W
A
A
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise specified)
Parameters
Reverse Breakdown Voltage
Reverse voltage leakage current
Forward Voltage
Diode Capacitance
Symbol
V_(BR)
I_R
V_F1
V_F2
V_F3
V_F4
V_F5
V_F6
C_D
Min.
200
-
-
-
-
-
-
-
-
Max.
-
10
0.75
0.85
0.95
1.1
1.3
1.5
4
Unit
V
nA
V
V
V
V
V
V
pF
Test Conditions
I_R =5µA
V_R =180V
I_F = 1 mA
I_F = 10 mA
I_F = 50 mA
I_F = 100 mA
I_F = 200 mA
I_F = 300 mA
V_R = 0, f = 1 MHz
http://www.SeCoSGmbH.com/
30-Nov-2010 Rev. B
Any changes of specification will not be informed individually.
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